AOK53S60L

Series:	aMOS™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	70 mOhm @ 26.5A, 10V
Vgs(th) (Max) @ Id:	3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	59nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	3034pF @ 100V
FET Feature:	--
Power Dissipation (Max):	520W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247
Package / Case:	TO-247-3

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AOK53S60L Application Field and Working Principle

AOK53S60L is an N-channel enhancement-mode MOSFET (metal-oxide-semiconductor field-effect transistor) developed by ON Semiconductor. It is a low cost, low threshold voltage FET, and is designed for applications requiring improved gate threshold voltage characterization.

Application Fields

AOK53S60L is ideal for a wide range of applications including, but not limited to, industrial motor control, data acquisition and signal conditioners, motor control, power on/off and reset circuits. Additionally, the device offers an excellent combination of features for many applications such as Gate Drivers for Improved Efficiency, Switching Regulators for Energy Efficiency, and Light Dimmer Applications.

Characteristic Features

The AOK53S60L is optimized for low gate to source threshold voltage and low on-resistance. It has a maximum drain to source breakdown voltage ranging from 40V to 200V. Additionally, it has a maximum drain current of 75 A, with a total gate charge of 13 nC to 14 nC. The device is ideal for applications requiring low on-resistance and high blocking voltage ratings.

Working Principle

Like all MOSFETs, the AOK53S60L is constructed with source, drain and gate terminals. The MOSFET also has an internal gate oxide film that isolates the gate electrode from the drain and source. This insulating film is semiconducting in nature, and its resistance can be adjusted from zero to infinity. When a positive voltage is applied to the gate terminal, the gate oxide film allows a current to flow from the drain to the source terminals. This drain to source current is known as the channel current and its magnitude is determined by the voltage applied to the gate terminal. The magnitude of the channel current is also determined by the drain-source voltage, known as the bias voltage. As the channel current flows, the barrier between the source and drain is reduced, thus allowing the electrons to move freely. This is the basic principle of operation of the MOSFET. In summary, AOK53S60L is an enhancement-mode transistor that uses an oxide gate film to control the drain to source current which is the measure of the power delivered. It is ideal for applications that require low on-resistance and higher blocking voltage ratings.

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