AOK5N100 Allicdata Electronics
Allicdata Part #:

AOK5N100-ND

Manufacturer Part#:

AOK5N100

Price: $ 1.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 1000V 4A TO247
More Detail: N-Channel 1000V 4A (Tc) 195W (Tc) Through Hole TO-...
DataSheet: AOK5N100 datasheetAOK5N100 Datasheet/PDF
Quantity: 1000
480 +: $ 1.35909
Stock 1000Can Ship Immediately
$ 1.51
Specifications
Series: --
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 4.2 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
FET Feature: --
Power Dissipation (Max): 195W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247
Package / Case: TO-247-3
Description

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AOK5N100 is an insulated gate bipolar transistor (IGBT) which combines elements of both a bipolar transistor and a field-effect transistor. It is primarily used in switching applications where fast switching and over-voltage protection are required. This type of IGBT is being used extensively in the rapidly growing power semiconductor business.

AOK5N100 can be used in many applications such as motor control, power control, HVAC and automation, etc. It provides a low on-resistance, good current carrying capability with the capability of blocking up to 800V, making it suitable for high power switching. Its features include high voltage blocking, high current carrying capacity, low on-resistance, integrated freewheel diode, low power losses, thermal shutdown protection and so on.

AOK5N100 works on the principle of the MOSFET. MOSFET stands for metal-oxide-semiconductor field-effect transistor. It consists of a gate, a source and a drain, which are separated by a thin layer of a semiconductor material. When no voltage is applied, the gate acts as an insulator. When a voltage is applied, electrons will be attracted to the gate and form a conducting channel between the source and the drain, allowing current to flow.

AOK5N100 is comprised of three terminals, namely Drain (D), Source (S) and Gate (G), that are connected to distinct junctions. When a certain threshold voltage is applied between the Gate and the Source terminals, a channel is created between the Source and the Drain, allowing current to flow. The current flow also depends on the voltage between Drain and Source. This high voltage\'s conduction ability and blocking voltage makes it an ideal choice for power switches.

AOK5N100 is widely used in high power switching applications. It is used as a fast switching switch in motor control, HVAC and automation, etc. Its capability of blocking up to 800V makes it great for high power application. Its features including low on-resistance and low power losses makes it ideal for use in controlling large DC motors or AC induction motors in various applications.

AOK5N100 has a wide range of applications and is fast becoming a reliable replacement for the much older legacy transistors. Its lower power losses and fast switching make it an ideal option for use in switching applications where overvoltage protection and fast switching is required. Its integration with a free-wheel diode and its thermal shutdown protection makes it a safe and reliable choice for high power applications.

The specific data is subject to PDF, and the above content is for reference

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