AON7264E Allicdata Electronics
Allicdata Part #:

AON7264E-ND

Manufacturer Part#:

AON7264E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CHANNEL 60V 28A 8DFN
More Detail: N-Channel 60V 28A (Tc) 27.5W (Tc) Surface Mount 8-...
DataSheet: AON7264E datasheetAON7264E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN-EP (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 27.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 30V
Vgs (Max): ±20V
Series: AlphaSGT™
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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The AON7264E is a power field effect transistor (FET) designed for use in high temperature, high power applications where high efficiency radios, low gate charge, and low power dissipation are key requirements. This MOSFET was specifically designed to be used in applications such as high-efficiency amplifiers, switching converters, regulators, and lighting control circuits. This device operates at a voltage range of between 20V and 110V, with a low on-state resistance of 2.2mOhms at a load current of 10A, making it an ideal solution for portable and high current applications.

The AON7264E features a low gate-source capacitance, allowing for very fast switching speeds while providing excellent thermal performance. Additionally, the output voltage of this FET varies only 3mV from a clamped gate bias of 10V, allowing for precision current/voltage control. This device achieves an ESD threshold of up to 8 kV for HBM and 8kV for CDM, making it suitable for use in a variety of environments.

The AON7264E has a dynamic break down which is the ability to control both its gate-source voltage and its drain-source voltage. Using the dynamic break down, you can control the voltage that is applied across the drain-source terminal of the FET. This allows for the FET to be used in applications such as high side switching, where the voltage is constantly changing. The FET is able to hold its drain-source voltage steady despite the changing voltages applied to the gate-source.

The AON7264E is an N-channel MOSFET, which consists of an array of channels filled with an oxide dielectric. Electrodes on the gate terminal form a gate oxide layer, which acts as an insulator between the gate electrode and the channel. The N-channel provides voltage controlled current flow, allowing you to switch the FET on and off with a gate voltage. This is the basic mechanism of MOSFET operation.

The AON7264E is excellent for applications that require power efficiency, high switching frequency, and low internal capacitance. Its low on-state resistance allows for superior thermal performance, making it ideal for use in battery-powered applications such as laptops and mobile phones. Additionally, its low gate charge enables it to switch quickly, which is beneficial for applications requiring fast response times.

The AON7264E can be used as an amplifier, regulator, gate driver, and in any number of different power control circuits. It is also suitable for use in switch-mode power supplies, motor drives, and DC-DC converters. Due to its high efficiency, power dissipation, and small size, this FET can provide an excellent solution for a variety of power control applications.

The specific data is subject to PDF, and the above content is for reference

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