
Allicdata Part #: | 785-1303-2-ND |
Manufacturer Part#: |
AON7403 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 11A 8DFN |
More Detail: | P-Channel 30V 11A (Ta), 29A (Tc) 3.1W (Ta), 25W (T... |
DataSheet: | ![]() |
Quantity: | 5000 |
Specifications
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerSMD, Flat Leads |
Supplier Device Package: | 8-DFN (3x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 15V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 29A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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AON7403 is a single N-channel Mosfet (Metal–Oxide–Semiconductor Field-Effect Transistor) . This type of transistor is widely used in variety of industries and applications due to its superior electrical and mechanical characteristics. The major application of AON7403 can be seen in power management of different devices ranging from computers to appliances like air conditioners, washing machines, etc.The working principle of AON7403 is reliant on the fact that the electrical resistance or impedance of an N-channel Mosfet is inversely proportional to the magnitude of electric field which is applied to its gate. This property of N-channel Mosfets allows them to control the flow of current through them. By applying different levels of voltage at their gates, they can act as either open switches or closed switches. This property is further amplified as the size of the transistor reduces making them suitable for different applications. AON7403 is a single n-channel Mosfet made up of silicon, which is covered by an insulating layer known as gate oxide. An n-type substrate is used in this transistor and the drain and source are connected to the substrate. The gate of the transistor is connected to a voltage source and is surrounded by a gate oxide layer. When no voltage is applied to the gate, the n-type substrate remains at the same potential causing no current to flow through the transistor. When a small voltage is applied to the gate, the potential of the substrate changes to a slightly positive value and the current flows from source to drain. The main electrical characteristics of AON7403 are as follows: Forward Voltage Drop - VGS= 2V, ID = 3 A On-State Resistance - RDSon = 0.05 ohm. Maximum Power Dissipation - Ptot = 750mW@Tcase = 25°C. Operating Voltage Range - VDS = 12V to 36 V.The AON7403 has some advantages over other types of transistors. Its superior thermal and electrical performance makes it ideal for a wide range of applications. It can handle high currents with low on-state resistance, which makes it ideal for high-power applications. Furthermore, it has a low gate charge, which reduces the rest time of the transistor and reduces the size of the gate capacitor used. AON7403 can be used in many different types of applications like switching power supplies, uninterrupted power supplies, DC-DC converters, and other power control circuits. It can also be used in motor control circuits, audio amplifiers, and other power control related applications.In conclusion, AON7403 is a single N-channel Mosfet that has superior thermal and electrical characteristics and is the chief choice of transistor for many applications in the industry. Its unique features like low on-state resistance, high power-dissipation and low gate-charge makes it suitable for a wide range of applications ranging from power electronics to switching power supplies.
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