AON7436 Allicdata Electronics
Allicdata Part #:

785-1311-2-ND

Manufacturer Part#:

AON7436

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 20V 9A 8DFN
More Detail: N-Channel 20V 9A (Ta), 23A (Tc) 3.1W (Ta), 16.7W (...
DataSheet: AON7436 datasheetAON7436 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 16.7W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 19 mOhm @ 9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 23A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The AON7436 MOSFET is a silicon carbide (SiC) MOSFET developed by Alpha and Omega Semiconductor (AOS). Its low on-resistance and exceptionally fast switching capability offer an advantage for many high-performance applications compared to traditional silicon MOSFETs.

The AON7436 is a single-channel, high voltage, logic-level MOSFET with an on-resistance of 7.5 mΩ max. It operates with a maximum drain source voltage (Vds) of 500 V and a maximum current (Id) of 6.5 A. It is able to switch up to 1200 V of reverse drain-source voltage (Rdson) and has a typical gate charge of only 9 nC. This makes the AON7436 ideally suited for low dB applications where high speed and low power consumption are critical.

AON7436 MOSFETs are used primarily in power management applications such as AC-DC converters, DC-DC converters, switch mode power supplies (SMPS) and uninterruptible power supplies (UPS). These devices are also used in motor control systems, power inverters, lighting controllers and automotive thermal solutions. The AON7436 is compatible with various drive technologies such as PWM, linear, H-bridge and digital control schemes.

The working principle of the AON7436 MOSFET is quite simple. When an adequate voltage is applied to the gate, the positive terminal of the control voltage conduction channel forms at the drain and the negative terminal at the source. This is because the depletion region in the interior of the dielectric is broadened by the electric field. Thus, a conducting channel is generated between the drain and the source, and electric current flows along this conducting channel, enabling the MOSFET to switch on.

The high voltage capability of the AON7436 MOSFET reduces conduction losses and enables higher device efficiency in switching applications compared to lower voltage devices. Low Rdson and low gate charge enable high performance power systems in less space and with higher power density, while the low on-resistance makes the AON7436 well suited for low power, low sum total harmonic distortion (THD), low EMI/RFI noise applications.

In summary, the AON7436 MOSFET provides an efficient, high-speed switching solution, particularly in high voltage power management and control applications. Its low on-resistance and low gate charge make it a suitable choice for low dB solutions with high switching frequencies, while its high voltage capability enables higher efficiency and power density in power systems.

The specific data is subject to PDF, and the above content is for reference

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