AON7754 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.4V @ 250µA
Package / Case:	8-PowerSMD, Flat Leads
Supplier Device Package:	8-DFN (3x3)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.1W (Ta), 70W (Tc)
FET Feature:	Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds:	1975pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	AlphaMOS
Rds On (Max) @ Id, Vgs:	3.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	24A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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AON 7754 application field and working principle

AON 7754 is an integrated power field effect transistor (FET) developed by an international semiconductor company. It is a 4-port Single-Chip Switching Transistor that offers enhanced channel-to-channel performance and outstanding protection features. This device can be used for various types of digital circuits, especially in switching power supplies, consumer electronics, and general-purpose analog circuits. This article discusses the application field and working principle of AON 7754. The AON 7754 is a low-voltage, n-channel power FET designed for use in small-footprint, high-current applications. The device is equipped with a low resistance, high-current, low-voltage (LV) body, enabling it to operate at low voltages, while the higher voltage N-channel FETs allow current up to 2 amps, providing superior power and efficiency. The AON 7754 features a maximum gate-to-source voltage (VGS) of 12V and a maximum drain-to-source voltage (VDS) of 20V, providing superior protection features and flexibility. The AON 7754 is also equipped with two auxiliary drain terminals (ADT) that can be used to provide additional power, while the device is operated in a three-port mode. The AON 7754 is a power and temperature-controlled device, providing superior performance in a wide range of temperatures. The device is designed to dissipate heat from both sides of the chip, thus enabling efficient cooling and lower power dissipation. The AON 7754 is also designed to have a low power-off leakage current that can be adjusted to ensure the device is operable in a wider temperature range. Additionally, the device features a STAT and DC test pins that provide easy access to complementary diagnostics and debugging. The AON 7754 is a versatile, high-performance and cost-efficient device with a unique combination of features. This device is ideal for a variety of applications, including notebook PC\'s, automotive systems, industrial control systems, power supplies and many others. It is also widely used in circuit applications such as power switches, motor drives, cellular phones, motor control circuits and more. The working principle of the AON 7754 is based on the power MOSFET structure of an N-channel FET switch, with two adjacent gate insulation layers. This structure enables the device to be operated between an on and off state. A gate bias voltage is applied to the gate terminals, which determines whether the device is switched on or off. The device switches on when the gate voltage is increased while the device is turned off when the gate voltage is decreased. The AON 7754 can also be operated in a three-port mode, where the ADT terminals are used to provide additional power. In conclusion, the AON 7754 is a versatile and cost-efficient power FET that offers a unique combination of features. It is ideal for a variety of applications and is widely used in circuit applications such as power switches, motor drives, automotive systems and many others. Its working principle is based on the power MOSFET structure of an N-channel FET switch, with two adjacent gate insulation layers. This structure enables the device to be operated between an on and off state, with a gate bias voltage being applied to the gate terminals determining whether the device is switched on or off.

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