Allicdata Part #: | 785-1680-2-ND |
Manufacturer Part#: |
AON7758 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 75A 8DFN |
More Detail: | N-Channel 30V 36A (Ta), 75A (Tc) 4.2W (Ta), 34W (T... |
DataSheet: | AON7758 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | AlphaMOS |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Ta), 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.85 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 4.2W (Ta), 34W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN-EP (3.3x3.3) |
Package / Case: | 8-PowerWDFN |
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AON7758 is a high voltage, low-leakage, N-Channel MOSFET intended for use in power supplies and switching applications. AON7758 has been designed to exceed the requirements of UL 60950 and IEC60950.
The AON7758 is designed for use in high-end applications as a switch. It has a low on-resistance and can handle voltages up to 80V. It has a high operating temperature range and a low temperature coefficient. The AON7758 can be used in a variety of applications including switching, power supplies and more.
AON7758 is a high-performance N-Channel MOSFET that is designed for low-voltage high-current applications. It has a very low on-resistance and can handle a drain-source voltage up to 80V. It also has a low gate-source threshold voltage, ensuring that it can be used in a variety of applications. The device has a package size of 346.1 x 74.2 x 3.2mm, making it suitable for high-density applications.
The AON7758 has an N-channel MOSFET structure with two gates. One gate is the control gate and the other is the source gate. The source gate is connected to the source and is used for controlling the current flow between the drain and the source. The control gate is connected to the voltage source, and it is used for controlling the current between the source and drain. The control gate voltage determines the resistance of the device, and it can be used to regulate the current passing through the MOSFET.
The AON7758 has a low ESD (electro-static discharge) susceptibility and it is capable of withstanding a wide range of ESD pulses . This allows the device to be used in sensitive applications such as switching power supplies and other high-voltage applications. The device also has a high operating temperature range of -55°C to +105°C and a temperature coefficient of 2.6mV/K.
The AON7758 can be used in a variety of applications in the medical, automotive and industrial sectors. It is also suitable for use in home applications such as farm equipment and small appliances. The device is particularly suitable for use in applications that require low power loss and high efficiency.
In conclusion, AON7758 is an ideal choice for a wide range of applications thanks to its low on-resistance, wide operating temperature range and low temperature coefficient. It is suitable for use in sensitive applications such as switching power supplies and other high-voltage applications. The device has a package size of 346.1 x 74.2 x 3.2mm, making it suitable for high-density applications.
The specific data is subject to PDF, and the above content is for reference
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