Allicdata Part #: | 785-1189-5-ND |
Manufacturer Part#: |
AOT7N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 7A TO-220 |
More Detail: | N-Channel 600V 7A (Tc) 192W (Tc) Through Hole TO-2... |
DataSheet: | AOT7N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 192W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1035pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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.AOT7N60 is a power MOSFET product of Aosong (Guangzhou) Electronics Co., Ltd made for power devices. It belongs to the category of transistors-FETs and MOSFETs-Single. The drain-source voltage is up to 600V. It is commonly used in various switching applications, such as motor control, power management, and automotive electronic control.
The basic operation of a MOSFET is very similar to a semiconductor diode. The difference is that the two transistors are arranged as substrate N-type MOS (metal oxide semiconductor) and the source and drain contacts are made of metal. The gate voltage modulates the conductivity of electrons to the drain. In an AOT7N60 device, the gate voltage is +10 volts and the drain voltage is -600 volts.
A MOSFET works when the electric field builds up at the gate and the width of the depletion layer around the drain is reduced. This allows the drain side to be changed from no-current to full-current. Voltage applied to a source of a MOSFET changes the conductivity of electrons to the drain. When a drain-source voltage is applied, the electric field created at the gate causes the electrons to flow from the drain side to the source side.
By changing the gate voltage more, the current flowing through the device can be controlled. If the gate voltage is increased, the current flowing through the device will increase, if decreased, the current will decrease. The working principle of AOT7N60 device is the same.
AOT7N60 has excellent electrical performance, such as high working voltage and current, low on-state resistance, and gate threshold voltage. It is suitable for use in power switching applications that require high output power, such as motor control, lighting, and power management. It is also a replaceable device for other high-voltage power transistors in the same series.
In addition, AOT7N60 has good switching performance and fast no-load switching speed. Its maximum switching losses are also very low, and its gate resistance can be up to about 15 ohms depending on the operating voltage. Furthermore, it also possesses high thermal resistance, temperature coefficient, and avalanche energy, providing users with reliable usage.
In conclusion, AOT7N60 is a power MOSFET product suitable for various switching applications due to its excellent electrical performance, high working voltage and current, low on-state resistance, as well as gate threshold voltage among others. It has good switching performance and fast no-load switching speed and further provides users with reliable usage. As a result, it has become a popular choice for users in the power switching industry.
The specific data is subject to PDF, and the above content is for reference
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