AOT7N60 Allicdata Electronics
Allicdata Part #:

785-1189-5-ND

Manufacturer Part#:

AOT7N60

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 7A TO-220
More Detail: N-Channel 600V 7A (Tc) 192W (Tc) Through Hole TO-2...
DataSheet: AOT7N60 datasheetAOT7N60 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 192W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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AOT7N60 is a power MOSFET product of Aosong (Guangzhou) Electronics Co., Ltd made for power devices. It belongs to the category of transistors-FETs and MOSFETs-Single. The drain-source voltage is up to 600V. It is commonly used in various switching applications, such as motor control, power management, and automotive electronic control.

The basic operation of a MOSFET is very similar to a semiconductor diode. The difference is that the two transistors are arranged as substrate N-type MOS (metal oxide semiconductor) and the source and drain contacts are made of metal. The gate voltage modulates the conductivity of electrons to the drain. In an AOT7N60 device, the gate voltage is +10 volts and the drain voltage is -600 volts.

A MOSFET works when the electric field builds up at the gate and the width of the depletion layer around the drain is reduced. This allows the drain side to be changed from no-current to full-current. Voltage applied to a source of a MOSFET changes the conductivity of electrons to the drain. When a drain-source voltage is applied, the electric field created at the gate causes the electrons to flow from the drain side to the source side.

By changing the gate voltage more, the current flowing through the device can be controlled. If the gate voltage is increased, the current flowing through the device will increase, if decreased, the current will decrease. The working principle of AOT7N60 device is the same.

AOT7N60 has excellent electrical performance, such as high working voltage and current, low on-state resistance, and gate threshold voltage. It is suitable for use in power switching applications that require high output power, such as motor control, lighting, and power management. It is also a replaceable device for other high-voltage power transistors in the same series.

In addition, AOT7N60 has good switching performance and fast no-load switching speed. Its maximum switching losses are also very low, and its gate resistance can be up to about 15 ohms depending on the operating voltage. Furthermore, it also possesses high thermal resistance, temperature coefficient, and avalanche energy, providing users with reliable usage.

In conclusion, AOT7N60 is a power MOSFET product suitable for various switching applications due to its excellent electrical performance, high working voltage and current, low on-state resistance, as well as gate threshold voltage among others. It has good switching performance and fast no-load switching speed and further provides users with reliable usage. As a result, it has become a popular choice for users in the power switching industry.

The specific data is subject to PDF, and the above content is for reference

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