Allicdata Part #: | 785-1269-5-ND |
Manufacturer Part#: |
AOT7S60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V TO220 |
More Detail: | N-Channel 600V 7A (Tc) 104W (Tc) Through Hole TO-2... |
DataSheet: | AOT7S60L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 104W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 372pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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AOT7S60L is a N-channel enhancement mode field effect transistor (FET), that is used in various electronic applications, such as power management, as well as DC-DC converters/controllers and motor control applications. It has a lower RDS(ON) of 4mOhms typical and it is a robust part, with a wide temperature range of -55°C to +150°C.
Description
The AOT7S60L is a three-terminal device, with a drain-source voltage of 60V and a 1.2A continuous drain current. This FET also has a fast switching speed, and is compatible with most digital logic levels, making it ideal for low-level switching applications. It can also handle transient voltage peaks of up to -50V without damage.
Features
- Low RDS(ON)
- High switching speed
- Low threshold voltage
- Robustness
- Wide temperature range
Applications
- Power Management
- DC-DC Converters/Controllers
- Motor Control
- High Voltage FET Circuitry
- Temperature Control Circuits
- Surge Protection Applications
Working Principle
When voltage is applied across the Gate and Source terminals, the FET will draw current from the Source terminal which generates a magnetic field. This field induces a current from the Drain terminal, creating a voltage drop across the Source-Drain circuit. This voltage drop controls the flow of current in the circuit and allows the user to control the current flow in the circuit by adjusting the gate voltage.
The voltage between the Gate and Ground terminals is known as the threshold voltage (VGT), which controls when the FET will begin conducting. When the gate voltage is below the threshold voltage, the FET remains in a fully off state and no current will flow through the circuit. As the gate voltage approaches the threshold voltage, the FET starts to conduct current. Above the threshold voltage, the FET is considered to be on and the current will continue to increase. The FET is also able to handle high power surges due to its low on-resistance which prevents the FET from getting excessively hot.
Conclusion
The AOT7S60L is a popular FET that is used in a variety of applications, including power management, DC-DC converters/controllers, motor control, and surge protection applications. It has a low threshold voltage, low RDS(ON), and high switching speed, making it an ideal choice for low-level switching applications. It can also handle transient voltage peaks of up to -50V without damage, making it suitable for use in high voltage circuitry. Finally, the AOT7S60L is robust and can operate in wide temperature ranges, ensuring reliable performance for many applications.
The specific data is subject to PDF, and the above content is for reference
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