| Allicdata Part #: | 785-1516-5-ND |
| Manufacturer Part#: |
AOT7S65L |
| Price: | $ 1.36 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 650V 7A TO220 |
| More Detail: | N-Channel 650V 7A (Tc) 104W (Tc) Through Hole TO-2... |
| DataSheet: |  AOT7S65L Datasheet/PDF |
| Quantity: | 674 |
| 1 +: | $ 1.23480 |
| 10 +: | $ 1.11762 |
| 100 +: | $ 0.89819 |
| 500 +: | $ 0.69859 |
| 1000 +: | $ 0.57884 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 434pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
| Series: | aMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 3.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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AOS7S65L is a single N-channel MOSFET (Metal Oxide Field Effect Transistor). Its an enhancement type device, meaning that the device can be operated in either enhancement or depletion mode. AOS7S65L can be used for several applications, including power switches, level shifting, and load switches. These are all applications where a device can be turned on or off either manually or automatically.
AOS7S65L has a Drain-Source resistance of around 2.6 Ohm, and a Gate-Source Voltage of +12V DC. The device has a very low threshold voltage, meaning it can be operated at very low voltage levels. It also has a very low input capacitance and a high switching speed, making it ideal for high-speed switching applications. In addition, it has high input impedance, which means that it can handle higher power inputs.
The working principle of the AOS7S65L is fairly simple. When a positive voltage is applied to the Gate-Source terminal, it creates a channel between the Source and Drain. This channel is used as a switching device and can be used to control the current flow through the device. The current is controlled by altering the resistance of the channel between source and drain. The higher the voltage applied to the Gate-Source terminal, the greater the current flow.
AOS7S65L has many applications in the realm of high-power switching. It can be used in power supplies, load switching, and level shifting. It can also be used to control the on-off state of high power devices such as motors, solenoids, and relays. In addition, it can also be used to control the speed of electric motors and to regulate the current in circuits.
AOS7S65L has several advantages over other types of transistors when it comes to power switching. It is a very fast device, and it has a high input impedance, making it ideal for high power applications. Additionally, it has a low on-resistance, which means it can handle higher voltages and currents. Lastly, its low threshold voltage makes it ideal for low voltage applications.
AOS7S65L is a versatile device, and it can be used in a variety of applications. It is ideal for many high-power switching and level shifting applications, and it has a number of advantages over other types of transistors. It can handle higher voltages and currents, and it has a low threshold voltage. These attributes make it an excellent choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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