AOT7N65

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOT7N65 is a kind of single n-channel trench gate field effect transistor (NFET). It has been developed by Alpha and Omega semiconductors and, equipped with minimal internal design requirements, it has given the best possible performance in the usage of power supply solutions.

AOT7N65 are characterized by a maximum drain-source breakdown voltage (BVDSS) of 45V and a maximum drain current rating (ID) of 78A. It also has a maximum crated on-state drain-source resistance (RDS(on)) of 0.25 Ohm with a typical RDS(on) of 0.19 Ohm. Lastly, its gate-source turn-on threshold voltage (VGS(th)) can reach up to 3.1V.

AOT7N65 has the typical maximum junction temperature (TJ) of 175°C and a maximum operating temperature of 150°C. Moreover, it has a maximum power dissipation (PD) of 744W and can operate in temperatures from -55°C to 150°C and with a storage temperature range of -55°C to 150°C, it is one of the most reliable NFETs in the market.

AOT7N65 uses advanced trench technology and features multiple dual-gate structures, which give the device excellent switching performance. It also has a low-Qg(total) and a low temperature coefficient of RDS(on). As a result, the NFET can be used in a wide range of different applications in various industries.

The main application field of AOT7N65 is the power supply solid state switches. Here, the NFET can be used as an inrush current limiter, a circuit breaker, or a switch for power supplies. The device is also suitable for high-efficiency synchronous rectifying applications and multi-string applications, like the photovoltaic panel string. Moreover, it can be used for an array of DC/DC and AC/DC converters and for any application where reliable and rugged performance is required.

The working principle of the NFET is very simple. When the gate voltage is applied, it induces an electric field which moves the majority carriers from the body to the channel and make charges within the channel region. The junction of the body and channel produces the built-in potential barrier and make the transistor to be in a high resistance state, since the majority carriers are blocked. Conversely, when the gate voltage is removed, the electric field will disappear and the built-in barrier will be neutralized, thus allowing majority carriers to flow and make the transistor in a low resistance state.

In addition, the AOT7N65 features an anti-parallel diode that clamps the turn-off energy and prevents any charge build-up in the power supply. This gives the device a very efficient EMI/RFI filtering and reduces the turn-on and switch-off losses, thus making it one of the most reliable NFETs in the market.

In conclusion, AOT7N65 is a kind of single n-channel trench gate field effect transistor (NFET) designed for power supply solutions. It is characterized by minimal internal design requirements and has a high drain-source breakdown voltage (BVDSS) and drain current rating (ID). The NFET can be used in many applications like power supply solid state switch, high-efficiency synchronous rectifying and multi-string photovoltaic panel applications. Moreover, its simple working principle allows the majority carriers to flow in the channel when no gate voltage is applied, thus allowing it to be in a low resistance state.

The specific data is subject to PDF, and the above content is for reference