| Allicdata Part #: | APT10035JLL-ND |
| Manufacturer Part#: |
APT10035JLL |
| Price: | $ 29.41 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 1000V 25A SOT-227 |
| More Detail: | N-Channel 1000V 25A (Tc) 520W (Tc) Chassis Mount I... |
| DataSheet: | APT10035JLL Datasheet/PDF |
| Quantity: | 1000 |
| 20 +: | $ 26.73620 |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | ISOTOP® |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 520W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5185pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 186nC @ 10V |
| Series: | POWER MOS 7® |
| Rds On (Max) @ Id, Vgs: | 350 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
| Drain to Source Voltage (Vdss): | 1000V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The APT10035JLL MOSFET is a device designed to control the electrical motivation of a system. A MOSFET (Metal Oxide Silicon Field Effect Transistor) is an insulated-gate semiconductor used in the electrical control of devices, and the APT10035JLL is designed to be used in high-temperature and automotive environments. This MOSFET has been designed with a low on-state resistance, making it suitable for use in high wattage applications.
The APT10035JLL MOSFET is a P-type device, meaning it is a source-channel type device, with the source connected to the substrate. This provides an enhanced on-state resistance and reduced power consumption. The APT10035JLL also has an integrated body diode, which provides electrostatic discharge protection.
The APT10035JLL MOSFET is a vertical power MOSFET for use in high temperature and automotive applications. It has a fast switching speed and a low on-state resistance, which makes it suitable for power switching applications. The device is built using an advanced tolerance process which provides tight in line device performance and uniformity. The device has an ESD protection level of 8kV as per IEC specification.
The APT10035JLL MOSFET is most commonly used in high power switching applications such as motor speed controls, power converters, and lighting control systems. It is also used in automotive applications such as DC-DC converters, power windows, and power door locks. The device is designed with an operating temperature range of -55°C to 175°C.
The working principle of the APT10035JLL MOSFET is based on the gate terminal voltage controlling the channel current. A channel is formed when a voltage is applied to the gate terminal, which forms a channel between the source and the drain. The current between the source and the drain depends on the gate voltage and is referred to as the drain current (Id). When the gate voltage increases, the drain current also increases and when the gate voltage decreases, the drain current decreases.
The APT10035JLL MOSFET is widely used in a range of applications due to its low on-state resistance, fast switching speed, high ESD protection and wide operating temperature range. It is suitable for both high power switching applications and automotive applications, making it an ideal choice for those looking for a reliable source of power.
The specific data is subject to PDF, and the above content is for reference
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APT10035JLL Datasheet/PDF