APT13003NZTR-G1 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5A
Voltage - Collector Emitter Breakdown (Max):	900V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 250mA, 1A
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	5 @ 1A, 2V
Power - Max:	1W
Frequency - Transition:	4MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92

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APT13003NZTR-G1 Application Field and Working PrincipleAPT13003NZTR-G1 is a form of bipolar junction transistor (BJT). It belongs to the single transistor category with current amplification properties and low on/off resistance. It has high voltage insulation and strong operational performance. This type of transistor is usually used in a wide range of application fields, like various switched applications, audio amplifiers, RF transmission, and integrated circuits.This type of transistor is a two electronic-terminal device that is used to control the amount of current between two other electronic terminals, such as a base and an emitter, or a collector and an emitter. The amplitude of the current flow between the two terminals is determined by the amount of voltage applied to the base. When the base voltage is increased, the current flow increases. Conversely, when the voltage is decreased, the current flow decreases. This allows for precise control of the current flow between the two terminals.BJTs are constructed from semi-conducting materials and consist of three different layers. The middle layer is known as the base, the top layer is known as the collector, and the bottom layer is known as the emitter. Depending on the type of BJT, either the collector or the emitter will be the more heavily doped part of the device, with the other being the lightly doped part. The type of BJT will also determine the width of the base layer, which will dictate the amount of current that can be controlled by this device.To understand how a BJT works, we must first understand how a typical BJT is constructed. A typical BJT has both a base terminal and an emitter terminal, as well as a collector terminal. The electrons from the base terminal pass through the base layer and enter the collector region, where they become part of the collector current. At the same time, a small fraction of the electrons from the base are injected into the emitter region, where they become part of the emitter current.The base-emitter junction of the BJT is reverse-biased, meaning that the base terminal is at a higher potential than the emitter terminal. As a result, the base-emitter junction acts like a diode, and only a small amount of current can flow from the base to the emitter. However, if the base terminal is connected to a positive voltage source, a larger amount of current will be able to flow through the device due to the increased voltage.The current amplification capabilities of the BJT come into play when a signal is applied to the base terminal. When the base voltage is greater than the emitter voltage, the base-emitter junction will be saturated. This will cause the collector current to increase, resulting in an amplification of the signal. The amount of amplification is determined by the gain of the BJT, which is calculated as the collector current divided by the base current. The APT13003NZTR-G1 is an NPN Bipolar Junction Transistor (BJT) that has been developed by the American Power Technology (APT) corporation. This BJT is rated for 100V Vceo and comes in the SOT-323 package size. It is a low-power mini-general-purpose amplifier with a small footprint, allowing it to be used in applications that require a compact, high-performing transistor. This BJT has a current-flow ratio of 1:100, making it particularly suitable for amplifying and switching low-voltage and low-power signals in applications such as audio amplifiers, RF transmissions, and integrated circuits. Its high voltage insulation of 100V is also an advantage, making it highly reliable and durable in high-voltage environments. Moreover, its low on/off RDS (on) gives excellent performance in switched applications. Overall, the APT13003NZTR-G1 has all the features required to make it a solid, reliable, and efficient bipolar junction transistor. It is highly suitable for use in a number of applications, and its small size makes it easy to integrate into various designs. Its current-flow ratio, high voltage insulation, and low on/off RDS (on) provide excellent performance in a variety of applications, making it a great choice for anyone looking for a reliable, high-performance transistor.

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