| Allicdata Part #: | APT12057B2LLG-ND |
| Manufacturer Part#: |
APT12057B2LLG |
| Price: | $ 24.52 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 1200V 22A T-MAX |
| More Detail: | N-Channel 1200V 22A (Tc) 690W (Tc) Through Hole T-... |
| DataSheet: | APT12057B2LLG Datasheet/PDF |
| Quantity: | 1000 |
| 30 +: | $ 22.28650 |
| Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | T-MAX™ [B2] |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 690W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6200pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 290nC @ 10V |
| Series: | POWER MOS 7® |
| Rds On (Max) @ Id, Vgs: | 570 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Bulk |
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APT12057B2LLG is a N-Channel Enhancement Mode Field Effect Transistor (FET) which uses a vertical structure based on field-plate technology. It is a reliable, efficient, cost-effective solution for many applications. It is particularly suitable for high current switching applications such as switching power supplies, DC to DC converters and motor control.
The APT12057B2LLG is designed to deliver superior performance and provide superior thermal management with a rugged package design. It has an on-resistance of less than 7 ohms in both the linear and saturation regions and is protected by Over Temperature protection (OTP). It has a very low gate threshold voltage, making it suitable for high temperature operation. This allows it to operate at a higher temperature than other transistors which may be subject to thermal runaway.
The APT12057B2LLG FET’s working principle is based on the application of a voltage to the gate of the FET. When a positive voltage is applied to the gate, the transistor is said to be in the linear region and will allow current to flow through it. When the applied voltage exceeds a certain level, the transistor will enter into the saturation region and will not allow any more current to pass through it. The ON resistance of the FET decreases with an increase in the gate voltage.
The APT12057B2LLG FET has a variety of applications. It can be used for low-side and high-side switching, as well as for switching of either DC or AC signals. It is commonly used in applications such as power supplies, motor controls, DC/DC converters, LED lighting, and audio/video equipment. It is also used in automotive and medical electronics. Because of its low on-resistance and low gate-threshold voltage, it is suitable for controlling high power applications.
The APT12057B2LLG FET is an economical solution for a wide range of applications. It is relatively easy to use and is a reliable, cost-effective, and efficient solution for many circuit designs. Its low gate threshold voltage makes it suitable for operation at high temperatures as well as for controlling high power applications.
The specific data is subject to PDF, and the above content is for reference
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APT12057B2LLG Datasheet/PDF