APT12057B2LLG Allicdata Electronics
Allicdata Part #:

APT12057B2LLG-ND

Manufacturer Part#:

APT12057B2LLG

Price: $ 24.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 1200V 22A T-MAX
More Detail: N-Channel 1200V 22A (Tc) 690W (Tc) Through Hole T-...
DataSheet: APT12057B2LLG datasheetAPT12057B2LLG Datasheet/PDF
Quantity: 1000
30 +: $ 22.28650
Stock 1000Can Ship Immediately
$ 24.52
Specifications
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 690W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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APT12057B2LLG is a N-Channel Enhancement Mode Field Effect Transistor (FET) which uses a vertical structure based on field-plate technology. It is a reliable, efficient, cost-effective solution for many applications. It is particularly suitable for high current switching applications such as switching power supplies, DC to DC converters and motor control.

The APT12057B2LLG is designed to deliver superior performance and provide superior thermal management with a rugged package design. It has an on-resistance of less than 7 ohms in both the linear and saturation regions and is protected by Over Temperature protection (OTP). It has a very low gate threshold voltage, making it suitable for high temperature operation. This allows it to operate at a higher temperature than other transistors which may be subject to thermal runaway.

The APT12057B2LLG FET’s working principle is based on the application of a voltage to the gate of the FET. When a positive voltage is applied to the gate, the transistor is said to be in the linear region and will allow current to flow through it. When the applied voltage exceeds a certain level, the transistor will enter into the saturation region and will not allow any more current to pass through it. The ON resistance of the FET decreases with an increase in the gate voltage.

The APT12057B2LLG FET has a variety of applications. It can be used for low-side and high-side switching, as well as for switching of either DC or AC signals. It is commonly used in applications such as power supplies, motor controls, DC/DC converters, LED lighting, and audio/video equipment. It is also used in automotive and medical electronics. Because of its low on-resistance and low gate-threshold voltage, it is suitable for controlling high power applications.

The APT12057B2LLG FET is an economical solution for a wide range of applications. It is relatively easy to use and is a reliable, cost-effective, and efficient solution for many circuit designs. Its low gate threshold voltage makes it suitable for operation at high temperatures as well as for controlling high power applications.

The specific data is subject to PDF, and the above content is for reference

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