| Allicdata Part #: | APT100F50J-ND |
| Manufacturer Part#: |
APT100F50J |
| Price: | $ 42.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 500V 103A SOT227 |
| More Detail: | N-Channel 500V 103A (Tc) 960W (Tc) Chassis Mount I... |
| DataSheet: | APT100F50J Datasheet/PDF |
| Quantity: | 15 |
| 1 +: | $ 38.22840 |
| 10 +: | $ 35.97990 |
| Vgs(th) (Max) @ Id: | 5V @ 5mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | ISOTOP® |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 960W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 24600pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 620nC @ 10V |
| Series: | POWER MOS 8™ |
| Rds On (Max) @ Id, Vgs: | 36 mOhm @ 75A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 103A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The APT100F50J is a single-cell, high power FET (Field-Effect Transistor). It is an ideal choice for applications that require low noise and high performance. This device is designed for use in high power applications, such as remote control and motor control circuits.
The APT100F50J is a high power FET with a wide range of available features, such as fast switching, low on-resistance, low switching noise, and very low gate-to-drain capacitance. The device is also very stable in terms of temperature, making it suitable for high temperature applications.
For power electronics, it is important to select the right FET for the application. The APT100F50J has extremely high current and voltage ratings, making it suitable for high power applications. The device is also easy to drive, and its low harmonic distortion makes it perfect for audio and video applications. Furthermore, it supports up to 80V drain-source voltage, making it capable of driving inductive loads.
The APT100F50J works by having the voltage across the source and the gate modulate the amount of current that flows through the device. This device is a JFET (Junction Field-Effect Transistor), which means its gate is insulated from the channel by a layer of P-type or N-type silicon. When a voltage is applied across the two terminals, the depletion layer increases or decreases, depending on the polarity of the applied voltage. This in turn modulates the width of the channel, and thus the flow of current through the device.
The device is commonly used in a variety of applications, including amplifiers, controllers, switches, and amplifiers. As it is capable of operating at high power, it is also perfectly suited for driving inductive loads, such as motors and solenoids. The device also has high switching speeds, making it suitable for pulse and data applications.
The APT100F50J is a reliable and efficient device, making it a great choice for various applications. Its high power capability makes it a perfect choice for high power applications, such as motor controllers and remote control circuits. The device also offers excellent noise characteristics, making it ideal for audio and video applications.
The specific data is subject to PDF, and the above content is for reference
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APT100F50J Datasheet/PDF