APT100F50J Allicdata Electronics
Allicdata Part #:

APT100F50J-ND

Manufacturer Part#:

APT100F50J

Price: $ 42.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 500V 103A SOT227
More Detail: N-Channel 500V 103A (Tc) 960W (Tc) Chassis Mount I...
DataSheet: APT100F50J datasheetAPT100F50J Datasheet/PDF
Quantity: 15
1 +: $ 38.22840
10 +: $ 35.97990
Stock 15Can Ship Immediately
$ 42.06
Specifications
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Series: POWER MOS 8™
Rds On (Max) @ Id, Vgs: 36 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The APT100F50J is a single-cell, high power FET (Field-Effect Transistor). It is an ideal choice for applications that require low noise and high performance. This device is designed for use in high power applications, such as remote control and motor control circuits.

The APT100F50J is a high power FET with a wide range of available features, such as fast switching, low on-resistance, low switching noise, and very low gate-to-drain capacitance. The device is also very stable in terms of temperature, making it suitable for high temperature applications.

For power electronics, it is important to select the right FET for the application. The APT100F50J has extremely high current and voltage ratings, making it suitable for high power applications. The device is also easy to drive, and its low harmonic distortion makes it perfect for audio and video applications. Furthermore, it supports up to 80V drain-source voltage, making it capable of driving inductive loads.

The APT100F50J works by having the voltage across the source and the gate modulate the amount of current that flows through the device. This device is a JFET (Junction Field-Effect Transistor), which means its gate is insulated from the channel by a layer of P-type or N-type silicon. When a voltage is applied across the two terminals, the depletion layer increases or decreases, depending on the polarity of the applied voltage. This in turn modulates the width of the channel, and thus the flow of current through the device.

The device is commonly used in a variety of applications, including amplifiers, controllers, switches, and amplifiers. As it is capable of operating at high power, it is also perfectly suited for driving inductive loads, such as motors and solenoids. The device also has high switching speeds, making it suitable for pulse and data applications.

The APT100F50J is a reliable and efficient device, making it a great choice for various applications. Its high power capability makes it a perfect choice for high power applications, such as motor controllers and remote control circuits. The device also offers excellent noise characteristics, making it ideal for audio and video applications.

The specific data is subject to PDF, and the above content is for reference

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