| Allicdata Part #: | APT17N80SC3G-ND |
| Manufacturer Part#: |
APT17N80SC3G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH 800V 17A D3PAK |
| More Detail: | N-Channel 800V 17A (Tc) 208W (Tc) Surface Mount D3... |
| DataSheet: | APT17N80SC3G Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3.9V @ 1mA |
| Package / Case: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package: | D3Pak |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 208W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2250pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 290 mOhm @ 11A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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APT17N80SC3G is a type of single MOSFETs, which has a wide variety of applications in power management, signal processing, and motor control. This device has an on resistance of the JFETs, the lowest threshold voltage of the NFETs, and uses the internal protection of the Schottky diodes that provides high temperature protection and reliabiliy.
The APT17N80SC3G MOSFETs device is a highly efficient power management device because of its high-frequency operation, low power consumption, and low thermal resistance. Its low on-resistance and switching time reduce the power dissipated and increase the electricity efficiency.
This device is also used in signal processing applications because of its high switching speed and low output impedance. In addition, its low input power consumption makes it suitable for energy-saving applications. It can also be used in motor control applications due to its ability to provide high-speed and accurate power management.
In addition to its electrical properties, the APT17N80SC3G MOSFETs device is mechanically rugged and reliable. Its robust package has soldering points for easy installation and repair, and it has a wide temperature operating range that makes it suitable for use in a variety of environmental conditions.
In terms of working principle, the APT17N80SC3G MOSFETs device works based on the P-N junction concept. It has two terminals, the gate and the source, which are separated by the junction. When a positive voltage is applied to the gate terminal, the flow of electrons is increased across the junction, called the channel. This current is then offloaded by the source terminal and onto the user’s circuit.
The APT17N80SC3G MOSFETs device also has reverse blocking characteristics, which means that it is capable of preventing reverse current flow. This is due to the presence of a reversely-biased junction, which blocks the reverse flow of electrons in the same manner as forward current is prevented. It is also very resistant to electrostatic discharge, making it suitable for use in industrial and medical applications.
Overall, the APT17N80SC3G MOSFETs device is an excellent choice for a variety of power management and signal processing applications. Thanks to its low power consumption and high switching speeds, it can provide efficient and reliable power management and fast and accurate processing for the user. Its low input power requirements and low thermal resistance also make it ideal for energy-saving applications, while its robust package and wide temperature range make it suitable for use in a variety of environmental conditions.
The specific data is subject to PDF, and the above content is for reference
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APT17N80SC3G Datasheet/PDF