Allicdata Part #: | APT15GT60BRG-ND |
Manufacturer Part#: |
APT15GT60BRG |
Price: | $ 2.93 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 42A 184W TO247 |
More Detail: | IGBT NPT 600V 42A 184W Through Hole TO-247 [B] |
DataSheet: | APT15GT60BRG Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
150 +: | $ 2.65574 |
Series: | Thunderbolt IGBT® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | NPT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 42A |
Current - Collector Pulsed (Icm): | 45A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 15A |
Power - Max: | 184W |
Switching Energy: | 150µJ (on), 215µJ (off) |
Input Type: | Standard |
Gate Charge: | 75nC |
Td (on/off) @ 25°C: | 6ns/105ns |
Test Condition: | 400V, 15A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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APT15GT60BRG Application Field and Working Principle
The APT15GT60BRG is a single insulated gate bipolar transistor (IGBT). It is produced by Infineon Technologies and is featured in their CoolMOS series. This IGBT is designed with the latest advancements in semiconductor technology, making it suitable for numerous applications.
The APT15GT60BRG is designed to expand the functionality of power electronic products, making it an ideal choice for applications such as solar, wind, and motor-controller use. Additionally, its high-frequency switching speeds and low on-state resistances make it suitable for inverters and UPSs. Additionally, the device operates up to 600V and offers superior performance with high current output.
Transistor Operation
The working principle of a transistor can be understood by looking at its structure. Transistors have three main parts: the collector, base and emitter. The structure of a transistor, including the APT15GT60BRG, has two layers. The first layer is the gate, which is made from a semiconductor material. The gate acts as an insulating layer between the collector and the emitter. The second layer is a conducting channel that connects the base to the collector.
When current is applied to the gate, the electrons in the channel conduct electricity. This causes an electric field to be generated. When the electric field is of sufficient strength, it causes the electrons in the channel to jump across the gate and to the collector. This process is known as electron-hole injection. The electrons that move to the collector cause a current to flow.
The transistor can be used as an amplifier or switch. As an amplifier, the output current is proportional to the input voltage. As a switch, the transistor can be used to control the flow of current in a circuit. The conductive channel can be completely switched off, allowing for very accurate control of circuits.
APT15GT60BRG Characteristics and Features
The APT15GT60BRG offers superior performance characteristics compared to other IGBTs. It is manufactured with Infineon’s CoolMOS technology and has a low 0.3 Ohm on-state resistance. It has a wide operating temperature range of -55°C to +150°C and is capable of carrying up to 200 A in a single device.
The device also features high-speed switching operation. It can run frequencies up to 4kHz, which is very beneficial for applications that require high control resolution. Additionally, the device has a low gate drive current requirement of 5 mA and a low lock-in voltage of 7 V.
The device has a compact "3 in 1" package which makes it ideal for applications with limited space and weight requirements. The package includes all three components; the IGBT main body, a Flyback Diode and a Gate Driver.
Conclusion
In conclusion, the APT15GT60BRG is a single IGBT designed to expand the functionality of power electronic products. It is manufactured with the latest advancements in semiconductor technology and has superior characteristics such as an extremely low 0.3 Ohm on-state resistance, high frequency switching capabilities, low gate drive current requirements, and a compact "3 in 1" package. The device is ideal for applications such as solar, wind, motor-controllers, inverters and UPSs.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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