Allicdata Part #: | APT13GP120BG-ND |
Manufacturer Part#: |
APT13GP120BG |
Price: | $ 4.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 41A 250W TO247 |
More Detail: | IGBT PT 1200V 41A 250W Through Hole TO-247 [B] |
DataSheet: | APT13GP120BG Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
90 +: | $ 4.27406 |
Series: | POWER MOS 7® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 41A |
Current - Collector Pulsed (Icm): | 50A |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 13A |
Power - Max: | 250W |
Switching Energy: | 115µJ (on), 165µJ (off) |
Input Type: | Standard |
Gate Charge: | 55nC |
Td (on/off) @ 25°C: | 9ns/28ns |
Test Condition: | 600V, 13A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 [B] |
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The APT13GP120BG is a transistor commonly used in applications where higher power switching is desired in a smaller area. It is a single IGBT (insulated gate bipolar transistor) and its structure consists of two elements: a collector and a base.
The main purpose of an IGBT is to switch high-power AC or DC circuits, with higher efficiency than a traditional transistor or MOSFET. IGBT transistors have much lower resistance than traditional transistors, allowing them to switch faster and provide higher efficiency performance.
The APT13GP120BG is characterized by its low on-state voltage, high blocking voltage, low thermal impedance, and low gate capacitance. The transistor\'s two leads, the collector and base, are relatively simple to connect.
When the APT13GP120BG is activated, typically by a low voltage applied to the gate terminal, it starts to conduct from the collector to the base. This is because the gate terminal causes an increase in positive majority carriers in the form of holes, which create a 3-dimensional current path from the collector to the base.
The transistor\'s collector is capable of dissipating over 1200 Watts during continuous wave operation, allowing the transistor to switch on and off at a consistent rate. When paired with an appropriate gate driver circuit, this transistor is capable of switching very high current at switch-on and switch-off times as low as 1nS. This makes it perfect for applications where high power needs to be switched in a reliable, consistent, and fast manner.
The APT13GP120BG transistor is commonly used in AC/DC converters, motor controllers, and various high-speed motor control applications that require reliable switching in a small area. The transistor can also be used in combination with power electronics or motor control circuits to protect devices from overcurrent, resulting in increased stability and reliability.
The APT13GP120BG\'s high-speed switching capability means that the transistor can be used in high-performance circuits, such as the ELSA DELSA (Dynamically Electronic Switched Alternating) where precise, precise switching is required. The transistor\'s high thermal impedance and low on-state voltage also enable this transistor to be used in applications that require low losses, such as BCD (Brightness Control Diode) circuits.
The APT13GP120BG is one of the most reliable IGBT transistors currently available on the market today, making it ideal for high-power and high-efficiency applications. Its low thermal impedance and low gate capacitance allow it to switch high current with minimal losses, ensuring that it meets the requirements for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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