Allicdata Part #: | APT15GP60KG-ND |
Manufacturer Part#: |
APT15GP60KG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 56A 250W TO220 |
More Detail: | IGBT PT 600V 56A 250W Through Hole TO-220 [K] |
DataSheet: | APT15GP60KG Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | 0.00000 |
Series: | POWER MOS 7® |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Obsolete |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | PT |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 56A |
Current - Collector Pulsed (Icm): | 65A |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 15A |
Power - Max: | 250W |
Switching Energy: | 130µJ (on), 121µJ (off) |
Input Type: | Standard |
Gate Charge: | 55nC |
Td (on/off) @ 25°C: | 8ns/29ns |
Test Condition: | 400V, 15A, 5 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 [K] |
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APT15GP60KG is a single IGBT developed by APT Technology. It is designed to provide high power handling capacity in minimal space.
The APT15GP60KG is a two-chip IGBT that uses an isolated insulated-gate electrode for each chip and a built-in NPN bipolar transistor connected in series. It has a low on-state voltage drop, low gate drive power dissipation, low switching losses, and a fast response. It is ideal for use in medium power applications such as motors, LED lighting, and more.
The IGBT is rated for a Vceo voltage of 600V and can handle up to a peak current of 600A. The maximum total power dissipation is 336W and the on-state RMS current is 15A. The typical turn-on time is 20µs and the turn-off time is 10µs. The maximum junction-to-case thermal resistance is 2.3°C/W.
The main benefits of using an IGBT as opposed to an MOSFET are its improved switching speed, lower power losses, and higher voltage motion capability. The IGBT can switch faster than the MOSFET, which makes it easier to use in high-frequency applications such as PWM and AC motor drive inverters. The power losses are also lower because the IGBT has no reverse body diode, which results in less heat generated by the device. Additionally, the IGBT has a higher voltage rating which allows it to be used in higher voltage applications.
The APT15GP60KG single IGBT is used in a variety of applications such as power supplies, motor drives, LED lighting, and more. In motor drives, it can be used to provide gate control for AC Voltage Source Inverters (VSIs), or to control high-frequency switching in DC-DC converters. In power supplies, the IGBT can be used to control high-power switching from a rectifier to the load.
The APT15GP60KG single IGBT works by controlling the flow of current between two terminals. When the gate voltage is zero, the IGBT acts like an open switch, preventing current from flowing through the device. When a positive voltage is applied to the gate, the IGBT turns on and allows current to flow through the device.
In summary, the APT15GP60KG single IGBT is a high power, high voltage integrated device used for power switching in a variety of applications. It has a low on-state voltage drop, low gate drive power dissipation, low switching losses, and a fast response. It is ideal for medium power applications such as motors, LED lighting, and more. It is also fast switching, has lower power losses, and operates at higher voltages than MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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