APT15GP90BG

Series:	POWER MOS 7®
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	900V
Current - Collector (Ic) (Max):	43A
Current - Collector Pulsed (Icm):	60A
Vce(on) (Max) @ Vge, Ic:	3.9V @ 15V, 15A
Power - Max:	250W
Switching Energy:	200µJ (off)
Input Type:	Standard
Gate Charge:	60nC
Td (on/off) @ 25°C:	9ns/33ns
Test Condition:	600V, 15A, 4.3 Ohm, 15V
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

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Introduction
The APT15GP90BG is a transistor, which falls in the IGBT (Insulated Gate Bipolar Transistor) family, and is specifically categorized as a single transistor. The IGBT is similar to a MOSFET (Metal-Oxide Field Effect Transistor), in that it has both a insulated N-type MOSFET format and a bipolar junction transistor structure. It has a superior electrical performance as compared to a traditional MOSFET in terms of blocking voltage, low on-state voltage drop and low switching losses.
Application Field
The APT15GP90BG is a power transistor and can be used as a power switch in applications such as those requiring high-speed switching, like a switching DC-DC converter and HIGH CURRENT DC-DC converter. It is also ideal for use in applications such as motor drives and DC/AC inverter applications which require high switching current and power up to 900V. As a power switch, it can be used in solar inverters and battery backup systems, including HEV or EV drives.
Working Principle
The APT15GP90BG has a gate voltage (V gate ) is usually between 10 and 20 V; which is enabled when the gate is turned on. The current flows freely from the source to drain through a low voltage operated insulated gate, as the result of electron tunneling effect. The current can be conducted in either direction (forward or reverse) thus leading to bipolar operation. During the on state, the insulated gate controls the voltage by either connecting or disconnecting the source and the drain of the transistor.This type of transistor also has an effect, known as Miller plateau; which occurs when the Vgate becomes high enough to create an electric field which exceeds the breakdown field of the trench P-N diode, The Miller plateau increases the conduction time and maximizes the efficiency of the device.When the transistor is powered down, the body cooling mechanism is activated, which ensures that the device reduces its voltage in a controlled manner, reducing the risk of short circuits or breakdowns, while also making it efficient.Conclusion
In conclusion, the APT15GP90BG transistor is a powerful single IGBT transistor, ideally suited to applications which require high power and speed, including solar inverters, HEV or EV drives, motor drives and DC/AC inverter applications. With its low switching losses and voltage drop, it offers a reliable and efficient solution for power control and switching applications.

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