Allicdata Part #: | APT30D100BG-ND |
Manufacturer Part#: |
APT30D100BG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 1KV 30A TO247 |
More Detail: | Diode Standard 1000V 30A Through Hole TO-247 |
DataSheet: | APT30D100BG Datasheet/PDF |
Quantity: | 793 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 2.3V @ 30A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 290ns |
Current - Reverse Leakage @ Vr: | 250µA @ 1000V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247 |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | APT30D100 |
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Diodes, consisting of a single semiconductor component, are perhaps the most common type of rectifier used in various circuits. Devoted to allowing current to flow in only one direction, a diode serves as a sort of gatekeeper for voltage. APT30D100BG is a single diode with a wide range of applications and properties, making it a very powerful tool for anyone working in circuit design.
The APT30D100BG rectifier has a variety of features, but most notably: a Vf max of 1.29 V, an If max of 30 A, an Ir max of 100 mA and a Vr max of 1500 V. This rectifier has a relatively low forward voltage drop and provides excellent reverse leakage current characteristics across a very broad temperature range.
When it comes to application, APT30D100BG diodes are a very popular choice in automotive, motor control, lighting, welding, and renewable energy systems. This diode is especially suited to high frequency and high surge current application. It is also suitable for telecom equipment, alternative energy systems, consumer electronics, and other high power applications.
The APT30D100BG rectifier has several advantages to its performance in terms of thermal stability, overvoltage protection, high reliability, and high reverse leakage current. The diode also possesses excellent surge characteristics with a low thermal resistance and a low reverse recovery time. Its unidirectional capability makes it attractive for high-speed switching and fast switching applications.
Rectifiers work by allowing current to only flow in one direction across its terminals. The APT30D100BG rectifier employs the same principle: a thicker low-resistance N-type silicon layer is sandwiched between a thicker P-type silicon layer, which results in a built-in bias in the PN junction. This PN junction acts as a barrier to the flow of current in one direction but permits the current to flow in the opposite direction.
At the heart of the APT30D100BG rectifier is the special construction of its PN junction. It utilizes a so-called Planar Passivated structure, which features planar passivation and higher breakdown voltage, enabling this diode to handle 1200V with ease. In addition, its high-performance dielectric with a low internal leak current provides superior circuit protection.
This rectifier also utilizes an asymmetric guard-ring structure to optimize the device’s thermal performance. When the forward current of the device increases, the guard-ring structure will immediately respond to the heat generated by transferring the heat from the device’s depression to the outside environment.
In conclusion, the APT30D100BG rectifier is a highly reliable single diode, perfect for quick and efficient circuit operation. Its combination of features make it perfectly suitable for a variety of high power applications, including motor control, lighting, and welding. Its PN junction, asymmetric guard-ring structure and special construction allow it to handle high surge currents while providing excellent thermal stability and circuit protection.
The specific data is subject to PDF, and the above content is for reference
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