APTGF165A60D1G Allicdata Electronics
Allicdata Part #:

APTGF165A60D1G-ND

Manufacturer Part#:

APTGF165A60D1G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT NPT PHASE 600V 230A D1
More Detail: IGBT Module NPT Half Bridge 600V 230A 781W Chassis...
DataSheet: APTGF165A60D1G datasheetAPTGF165A60D1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 230A
Power - Max: 781W
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 9nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
Description

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IGBT Modules are power switches used in a wide range of high-current, high-voltage applications, including power control and motor control systems. The APTGF165A60D1G is an Insulated Gate Bipolar Transistor (IGBT) module which provides high efficiency and low EMI noise for a variety of power applications. The module is rated for 65A at 1200V, and has a typical on-state voltage drop of 1.4V. This device is available in a DIP-8 package, and comes with several additional features such as Electronically-Controlled Shutdown and Under-Voltage Lock-Out. In this article, we will discuss the application fields and working principle of APTGF165A60D1G.

Application Fields

The APTGF165A60D1G module is an ideal power solution for a wide range of applications, including:

  • Power inverters
  • DC/DC converters
  • Battery chargers
  • Servo drives
  • Industrial motor control
  • Solar panel systems
  • Photovoltaic systems
  • UPS systems

The module’s wide temperature range operating capability makes it suitable for outdoor applications, while its small size and high power density make it a great choice for space-constrained systems.

Working Principle

The energy transfer of an IGBT module is based on the principle of three-terminal devices. This type of device has two electrodes, the collector and emitter, and a gate terminal which controls the flow of current between the collector and emitter. The gate terminal is an electronic device which detects the voltage applied to the base and switches on or off accordingly. When the voltage applied to the gate is higher than the threshold voltage, the device is switched on, allowing current to flow from collector to emitter.

The APTGF165A60D1G module uses a two-terminal gate drive system, so the switch can be powered from separate gate and power supply terminals. This allows for easier control of the on-state voltage drop of the device, as the gate voltage can be adjusted independently from the supply voltage.

The APTGF165A60D1G also provides superior noise immunity, so it is a great solution for applications requiring EMI filtering. This ensures reliable operation without compromising performance, even in high electromagnetic interference (EMI) environments.

Conclusion

The APTGF165A60D1G IGBT module is a versatile, high-performance power switch designed for a wide range of applications. It offers low on-state voltage drop, superior EMI immunity, and a wide temperature operating range, making it an ideal choice for both indoor and outdoor applications. The module’s two-terminal gate system also makes it easy to control the on-state voltage drop, providing reliable and efficient operation in any situation.

The specific data is subject to PDF, and the above content is for reference

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