Allicdata Part #: | APTGT200SK60TG-ND |
Manufacturer Part#: |
APTGT200SK60TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 290A 625W SP4 |
More Detail: | IGBT Module Trench Field Stop Single 600V 290A 625... |
DataSheet: | APTGT200SK60TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 290A |
Power - Max: | 625W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 200A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 12.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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APTGT200SK60TG Application Field and Working Principle
APTGT200SK60TG is an insulated gate bipolar transistor (IGBT) power module from APT Corporation. It offers a superior combination of positive temperature coefficient (PTC) and low voltage (200V) IGBTs in a compact, easy-to-manage package. This particular module is specifically designed to provide a robust, high power and low-frequency switching device with the lowest possible gate stationary power consumption.
Application Field
The APTGT200SK60TG IGBT module is suitable for use in a wide range of applications, primarily those requiring high power, low-frequency switching as well as low maintenance. For example, it is commonly used in converters, energy storages, induction heating, process control, motor drive and industrial automation. Other applications include power supply design and frequency control.
Working Principle
The APTGT200SK60TG IGBT module is based on the principle of insulated gate bipolar transistor. In an IGBT module, conduction occurs when a voltage is applied to a control gate, creating a depletion layer in the IGBT device, thus allowing current to flow from the collector region to the emitter region. The insulated gate bipolar transistor (IGBT) is basically a high speed switches with both low voltage and high current capability. With such high speed and low power dissipation, IGBTs are ideal for switching applications that require high current source or sink capability with high frequency operation. Furthermore, the PTC (positive temperature coefficient) of the IGBT module allows it to remain in its on state stable even under high temperature and can be used in current limiting applications.
Conclusion
The APTGT200SK60TG is an advanced IGBT power module with a superior combination of high power and low voltage IGBTs, making it a dependable and efficient switching solution with low maintenance requirements. It offers superior performance, reliability and flexibility and is a cost-effective solution for a wide range of applications, including converters, induction heating and motor drives. The module offers high speed switching and power dissipation, making it suitable for high current and frequency operations. Its positive temperature coefficient further improves stability and can be used in current limiting applications.
The specific data is subject to PDF, and the above content is for reference
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