
Allicdata Part #: | APTGLQ400A120T6G-ND |
Manufacturer Part#: |
APTGLQ400A120T6G |
Price: | $ 112.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | PWR MOD IGBT4 1200V 700A SP6 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 70... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 102.67700 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 700A |
Power - Max: | 1900W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 400A |
Current - Collector Cutoff (Max): | 200µA |
Input Capacitance (Cies) @ Vce: | 24.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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?IGBT (Insulated Gate Bipolar Transistor) modules play an important role in switching, controlling, and inverting power. APTGLQ400A120T6G is a type of IGBT module manufactured by Advanced Power Technology. This IGBT module offers a wide range of applications, such as uninterruptible power supplies (UPS), welding, and power conversion. In this article, the application field and working principle of APTGLQ400A120T6G IGBT module will be discussed.
The APTGLQ400A120T6G IGBT module implements a three-level topology, consisting of two insulated gate bipolar transistors (IGBTs) and two anti-parallel diodes. This three-level topology allows for a smooth switching transition between two transistor states, resulting in a higher input-output power conversion efficiency. This IGBT module is suitable for applications that require rapid switching and wide bandwidth in signal transmission. For instance, it can be used in welding applications to ensure reliable and consistent signal transmission over long distances.
The APTGLQ400A120T6G module can also be used in uninterruptible power supplies (UPS) systems. The module contains two IGBTs connected in parallel in order to provide a higher current carrying capacity. The parallel arrangement allows for a higher safe operating area as well, offering additional protection against current surges. Furthermore, the APTGLQ400A120T6G offers protection against over-temperature, over-voltage, and under-voltage conditions, ensuring reliable operation even in harsh environments.
The APTGLQ400A120T6G module also offers excellent power conversion efficiency. The module uses an advanced switching topology to reduce switching losses, resulting in high efficiency over a wide range of input-output power combinations. Furthermore, the module design takes into account the characteristics of the IGBTs, resulting in a high level of power conversion efficiency.
The working principle of the APTGLQ400A120T6G IGBT module is based on the principle of insulated gate bipolar transistor (IGBT). The IGBT is a three terminal device, which consists of two p-type layers and one n-type layer. It is an enhanced version of MOSFET, which is more suitable for power switching applications. When a voltage is applied to the gate, it will induce an electric field that will cause the electrons to flow from the source to the drain. As electrons flow, a current will be generated, causing the output voltage to change. In addition, the IGBT module can be used to reverse the current direction by adjusting the gate voltage accordingly.
In conclusion, the APTGLQ400A120T6G IGBT module offers a wide range of application fields and a high level of efficiency. It is suitable for a variety of power switching applications, such as welding and uninterruptible power supplies (UPS) systems. The module’s three-level topology ensures smooth switching transitions and a higher input-output power conversion efficiency. Furthermore, the module’s advanced switching characteristics and IGBT design result in a high level of power conversion efficiency.
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