APTGLQ50H65T1G Allicdata Electronics
Allicdata Part #:

APTGLQ50H65T1G-ND

Manufacturer Part#:

APTGLQ50H65T1G

Price: $ 27.77
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: POWER MODULE - IGBT
More Detail: IGBT Module Trench Field Stop Full Bridge 650V 70A...
DataSheet: APTGLQ50H65T1G datasheetAPTGLQ50H65T1G Datasheet/PDF
Quantity: 1000
100 +: $ 25.24450
Stock 1000Can Ship Immediately
$ 27.77
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 70A
Power - Max: 175W
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 3.1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SP1
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Integrated GATE Bipolar Transistors (IGBTs) are a popular form of power transistor. They are one of the most efficient devices around and can handle high-power electronics applications with relative ease. The APTGLQ50H65T1G module is designed specifically to make use of the IGBT technology, allowing users to handle high-current switching tasks with remarkable efficiency and reliability.

The key feature of the APTGLQ50H65T1G module is that it is an integrated Gate Bipolar Transistor Module. This means that the IGBT technology has been combined with a diode bridge to ensure the best overall functionality. The diode bridge provides an automatic voltage shift between the input and output, which allows for smooth switching and helps prevent surges in the circuit due to rapid changes in the current. It also ensures that the IGBT is not damaged by overcurrent.

The APTGLQ50H65T1G module is designed specifically to handle high-voltage power electronics applications. It can support up to fifty amps of DC current and is capable of switching voltages up to 600V in a single cycle. The APTGLQ50H65T1G operates at a frequency of 600Hz, which is suitable for most power electronics applications. The module requires a single control line for switching, so it is ideal for applications with limited available wiring for control signals. This makes the APTGLQ50H65T1G suitable for a range of applications.

The working principle of the APTGLQ50H65T1G module is based on the fact that when power is applied to the module, the IGBT in the module will start to conduct current. This will cause a bridge diode to turn on, allowing current to flow into the circuit. The IGBT will then use the voltage level of the gate to regulate the amount of current flowing through the circuit, allowing precise control of the power flow. This allows the APTGLQ50H65T1G module to operate with greater efficiency than traditional power transistors, such as MOSFETs.

The APTGLQ50H65T1G module is an ideal choice for a range of applications in many different sectors. It is well suited to power applications in the automotive, manufacturing, and medical industries, where precise voltage and current control is required. Its ability to handle high-voltage and high-current switching tasks also makes it ideal for AC/DC converters and power supplies, as well as for the control of high-power motor control systems. The module’s compact size and low costs make it an attractive option for many different power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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