
Allicdata Part #: | APTGF330SK60D3G-ND |
Manufacturer Part#: |
APTGF330SK60D3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 460A 1400W D3 |
More Detail: | IGBT Module NPT Single 600V 460A 1400W Chassis Mou... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 460A |
Power - Max: | 1400W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 400A |
Current - Collector Cutoff (Max): | 750µA |
Input Capacitance (Cies) @ Vce: | 18nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D-3 Module |
Supplier Device Package: | D3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
APTGF330SK60D3G Application Field and Working Principle
ApowerTech\'s discreet IGBT module, APTGF330SK60D3G, is a pre-assembled and tested four-pack IGBT in the discrete module form of 520A/600V. It is qualified according to JEDEC. It is suitable for various applications such as solar Inverter, UPS, welding machine, induction cooker, refrigerator, fan.
Application Field
APTGF330SK60D3G is widely used in power electronics, such as electric propulsion machinery, general purpose inverter, UPS, solar inverter. It is highly efficient, robust and reliable in operation due to its use of the latest DBC technology.
It can provide a high level of current and power in motor drives, UPS, electric power generation, solar power generation and frequency converters. Compact in size, the module is available in a wide range of configurations and can be used in a variety of applications.
Working Principle
APTGF330SK60D3G is an insulated gate bipolar transistor module which is composed of two insulated gate bipolar transistors (IGBTs) and two antiparallel diodes. IGBT combining an N-channel MOSFET and a PNP bipolar junction transistor in the one package is a power semiconductor device.
The IGBT module is based on the principle of the switching of an insulated gate by changing the bias voltage at the gate electrode. The voltage applied between the gate electrode and the emitter electrode determines the state of the IGBT, which is either in the "OFF" state or in the "ON" state.
The module is generally used to drive inductive loads. When the IGBT is in "OFF" state, the diode conducts current from the collector to the emitter. When the IGBT is in the "ON" state, the transistor is conducting and the diode is reverse-biased. Thus, the output voltage of the IGBT module will be much lower than the input voltage, providing a significant reduction in current consumption.
Conclusion
APTGF330SK60D3G is an IGBT module from ApowerTech, made from two insulated gate bipolar transistors and two antiparallel diodes. It is widely used in various applications such as electric propulsion machinery, general purpose inverter, UPS, and solar inverters, where it offers efficiency, robustness and reliability. The module works based on the principle of switching an insulated gate by changing the gate bias voltage.
The specific data is subject to PDF, and the above content is for reference
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