APTGF50H120TG Allicdata Electronics
Allicdata Part #:

APTGF50H120TG-ND

Manufacturer Part#:

APTGF50H120TG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE NPT FULL BRIDGE SP4
More Detail: IGBT Module NPT Full Bridge Inverter 1200V 75A 312...
DataSheet: APTGF50H120TG datasheetAPTGF50H120TG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 312W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.45nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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APTGF50H120TG Application Field and Working Principle

The APTGF50H120TG is a high-efficiency and high-speed power module designed for use in high-power applications including motor drives, telecom converters, and other high-end applications. This module is an insulated gate bipolar transistor power module that combines both the benefits of an IGBT and a thyristor in a single package.

The APTGF50H120TG has a 35A/1200V maximum current/voltage rating and a minimum guaranteed on-state current of 30A. The module also offers a typical collector-emitter saturation voltage of 1.3V at 25A and 1.05V at 10A. The module comes in a TO-247 packaging that is suitable for through-hole mounting. This module features a zero current switching and a low VCE(sat) characteristic, making it suitable for high-speed switching applications.

The APTGF50H120TG can be used for a variety of applications such as induction cooking, smart grid, renewable energy, welders, telecom converters, UPS systems, motor drives, and electric vehicle drives, among others. This module offers high power efficiency and ability to withstand harsh conditions. In addition, this module can deliver a very fast switching speed for its intended applications.

Working Principle

The APTGF50H120TG module incorporates an IGBT and a thyristor. The IGBT is a four-layer device composed of three terminals, namely the gate, emitter, and collector. It is used to switch on and off electrical current. The thyristor is a three-terminal semiconductor device. It has a gate, anode and cathode, and is used to create a controlled open and close switch when it is fired. The IGBT and thyristor components work together to create a high switching speed and power efficiency.

The APTGF50H120TG works by combining the characteristics of both an IGBT and a thyristor. The IGBT allows for fast on/off switching with low power losses and the thyristor offers high voltage blocking capability and current handling ability. When the module is triggered by the gate, the IGBT is activated and the thyristor begins to conduct. The combination of IGBT and thyristor offers higher voltage ratings and switching speeds than a single transistor.

The APTGF50H120TG module is a versatile and powerful power module that provides high speed switching in a rugged package. It is well suited for high voltage and high power applications, such as motor drives, telecom converters, and more. With its combination of an IGBT and thyristor, the module offers fast switching speeds and high power efficiency.

The specific data is subject to PDF, and the above content is for reference

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