APTGT150H60TG

Transistors - IGBTs - Modules

The APTGT150H60TG is a high-performance 600V Insulated Gate Bipolar Transistor (IGBT) module. This particular IGBT module, produced by one of the leading manufacturers of power semiconductors, is a suitable device to design high power motor drive and power conversion applications. It is especially effective in AC/DC and DC/DC applications, and offers remarkable operation at high switching frequency and power density.

Characteristics

The APTGT150H60TG module offers a highly efficient current rating of 150A, an excellent parasitic capacitance of 74nF, an isolated voltage rating of 600V and a dielectric strength of 8KV between its gate and collector terminals. Additionally, it offers a high switching frequency of 1kHz to 30kHz, a low on-state voltage of 600V and an exceptionally low leakage current of approximately 0.5mA at 150V. It also features a complete smart diode module with a thermal impedance of 2.7C/W and a positive temperature coefficient of 2.0 m/s.

Features

• High current rating of 150A
• Excellent parasitic capacitance of 74nF
• Isolated voltage rating of 600V
• Dielectric Strength of 8KV between gate and collector terminals
• High switching frequency of 1kHz to 30kHz
• Low on-state voltage rating of 600V
• Leakage current of 0.5mA at 150V
• Thermal Impedance of 2.7C/W
• Positive temperature coefficient of 2.0 m/s

Application Field and Working Principle

The APTGT150H60TG module is suitable for use in a range of power conversion applications, such as motor drives and power converters. It is also suitable for use in AC/DC and DC/DC applications. The working principle of the APTGT150H60TG module is based upon the principle of Insulated Gate Bipolar Transistor (IGBT). IGBTs combine the benefits of both Bipolar Junction Transistors (BJTs) and Field Effect Transistors (FETS). They are typically used for power control applications where high efficiency and fast switching is required.

The APTGT150H60TG module is based upon an IGBT chip, which is packaged on an isolated packaging to provide complete electrical and mechanical isolation. The module features two electrical isolation layers, which make it suitable for applications where protection against line-to-ground and line-to-line voltages is necessary. The precise layout of the device allows it to be used in high current applications while keeping its associated gate losses to a minimum.

In terms of operation, the APTGT150H60TG module is capable of either positive or negative current flow. It operates at an estimated switching frequency of 1 kHz to 30 kHz, and it is capable of achieving low on-state voltage operation. It also offers protection against over temperature, over current, over voltage and breakdown protection, allowing for a robust and reliable power conversion operation.

Conclusion

The APTGT150H60TG module is an excellent choice for high-performance power conversion applications. It offers great versatility, with a wide range of features and characteristics that make it suitable for a variety of applications. In addition, the device’s operation is based upon the highly efficient principle of IGBT, allowing for remarkable operation at high switching frequencies and power densities.