
Allicdata Part #: | APTGT35SK120D1G-ND |
Manufacturer Part#: |
APTGT35SK120D1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 55A 205W D1 |
More Detail: | IGBT Module Trench Field Stop Single 1200V 55A 205... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Discontinued at Digi-Key |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 55A |
Power - Max: | 205W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 35A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 2.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | D1 |
Supplier Device Package: | D1 |
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APTGT35SK120D1G is a module that houses a pair of IGBT transistor chips connected in inverse parallel. It is a high power semiconductor device that is found in motor drives, power conversion systems, and power supply applications. The module has a block diagram consisting of thermal paths, gate driver circuits, and output switches.
An IGBT (Insulated Gate Bipolar Transistor) is a combination of a bipolar junction transistor (BJT) and a MOS field effect transistor (MOSFET). It combines the simple switching characteristics of a MOSFET and the high current-carrying capacity of a BJT, allowing for greater power efficiency. The APTGT35SK120D1G module makes use of two IGBT transistor chips connected in inverse parallel to obtain higher current ratings.
The APTGT35SK120D1G module’s unique thermal management system enables it to maintain a low temperature during operation. This is done by reducing the drain temperature through strategically placed thermal gap fillers and metal heat sinks to prevent temperature increase.
The module’s working principle is based on the transistor’s ability to directly switch a high current circuit. When the IGBT’s gate voltage is high, the device is in the “on” state, allowing current to flow through the circuit. Conversely, when the gate voltage is low, the IGBT device is in the “off” state, preventing current from passing through the circuit. By controlling the voltage of the IGBTs’ gate, the current flow through the circuit can be switched on and off.
The APTGT35SK120D1G module is ideal for applications that require high currents and fast switching speeds. It is commonly used in motor drives, power supplies, and power conversion systems. It is also suitable for high power applications due to its high efficiency and temperature management system.
In conclusion, APTGT35SK120D1G is a module that houses two IGBT transistors connected in inverse parallel and is used in power conversion systems and power supply applications. It works based on the transistor’s ability to directly switch a high current circuit, which enables faster switching speeds and higher current ratings. The module’s thermal management system allows it to maintain a low temperature, which increases its efficiency and power capabilities.
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