Allicdata Part #: | APTGLQ30H65T3G-ND |
Manufacturer Part#: |
APTGLQ30H65T3G |
Price: | $ 24.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MODULE - IGBT |
More Detail: | IGBT Module Trench Field Stop Full Bridge 650V 40A... |
DataSheet: | APTGLQ30H65T3G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 21.97690 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 40A |
Power - Max: | 95W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 30A |
Current - Collector Cutoff (Max): | 50µA |
Input Capacitance (Cies) @ Vce: | 1.9nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
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Introduction
The APTGLQ30H65T3G IGBT module is an advanced insulated gate bipolar transistor device developed by ABB. It is widely used in industrial applications to provide efficient, reliable power switching and control. The APTGLQ30H65T3G IGBT module features a thin-film, vertical structure and offers outstanding performance characteristics in terms of power density, efficiency, and thermal management. This article will look at the application field and working principle of the APTGLQ30H65T3G IGBT module.
Application Field of the APTGLQ30H65T3G IGBT Module
The APTGLQ30H65T3G IGBT module is designed for applications that require high power-switching performance, such as large drive systems and renewable energy systems. The module is ideal for applications where fast switching speeds and high gate drive currents are required. It is also suitable for applications where circuit board space is limited, as it is smaller in size than conventional devices.
The APTGLQ30H65T3G IGBT module is highly suited for use in AC motor drive applications, including HVAC and robotics systems. It can also be used in energy conversion systems, where efficiency and power factor correction are required. Moreover, the module can be used in wind turbine systems to reduce the number of IGBT power switches and increase the overall efficiency of the system.
Working Principle of the APTGLQ30H65T3G IGBT Module
The APTGLQ30H65T3G IGBT module utilizes insulated gate bipolar transistor (IGBT) technology. An IGBT is a three-terminal device in which current flows from the collector to the emitter when the gate voltage is greater than the threshold voltage. The APTGLQ30H65T3G IGBT module is composed of a single thin-film, vertical structure. The thin-film provides faster switching speeds, less thermal resistance, and improved power density.
The APTGLQ30H65T3G IGBT module is equipped with a positive and negative gate drive circuit and an overvoltage protection circuit. The gate driver circuit provides fast switching speeds and a reset driver is used to protect the device against reverse polarity. The overvoltage protection circuit limits the maximum voltage applied to the power switches and provides protection against overvoltage events. Moreover, the APTGLQ30H65T3G IGBT module has a temperature sensor that monitors the internal temperature of the module and provides feedback for thermal management.
Conclusion
The APTGLQ30H65T3G IGBT module is an advanced power switching device designed for high power applications. It provides fast switching speeds and high power density, as well as overvoltage and temperature protection. The module is suitable for applications such as AC motor drive systems, HVAC systems, energy conversion systems, and wind turbine systems. The working principle of the APTGLQ30H65T3G IGBT module utilizes IGBT technology, and includes a positive and negative gate driver circuit, an overvoltage protection circuit, and a temperature sensor.
The specific data is subject to PDF, and the above content is for reference
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