APTGT100A60T1G Allicdata Electronics
Allicdata Part #:

APTGT100A60T1G-ND

Manufacturer Part#:

APTGT100A60T1G

Price: $ 23.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT PHASE LEG 600V 150A SP1
More Detail: IGBT Module Trench Field Stop Half Bridge 600V 150...
DataSheet: APTGT100A60T1G datasheetAPTGT100A60T1G Datasheet/PDF
Quantity: 1000
100 +: $ 21.31180
Stock 1000Can Ship Immediately
$ 23.44
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 150A
Power - Max: 340W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 6.1nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Description

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The APTGT100A60T1G is an insulated gate bipolar transistor (IGBT) module that has a wide range of applications. It serves as an advanced power switching device mainly used in frequency control and motor control applications. This type of IGBT module has the highest power capability, superior robustness and superior thermal performance. It can handle a greater voltage and current level that analogous modules in the market and it allows for a more efficient consumption of power when compared to other IGBTs. Furthermore, this type of module is suitable for a variety of applications including automotive products, industrial motor control, high-power motor control, lighting control and power converter control.

The working principle of the APTGT100A60T1G IGBT module is based on the same principle as other IGBTs. An IGBT is a combination of two separate transistors - the N-channel MOSFET and the P-channel insulated gate bipolar transistor. As the ibtgt100a module is a module, it’s actually composed of many smaller transistors. It therefore has four terminal points, which are named its collector, gate, emitter and drain.

The collector of the module allows an electrical current to flow into the module. The gate electrode is where voltage is applied in order to switch the device on and off. This gate voltage is between 10 and 15 V. When the gate voltage is increased, the N-channel MOSFET turns on, allowing a larger amount of current to flow from the collector to the emitter. As the current starts to flow in the forward direction, a voltage is created across the emitter and collector of the module.

The emitter of the module collects the current that was fed from the collector and later released from the gate. The current is then released through the drain terminal to control the output. By applying a control signal at the gate terminal, the magnitude of the current flow in the IGBT can be controlled quite accurately.

The APTGT100A60T1G is an IGBT module that is suitable for a wide array of industrial applications due to its overall robustness, superior thermal performance and highest power capability. Not only can this module be used in motor control applications, but also in frequency control and power converter control systems. Furthermore, it has the ability to efficiently handle higher voltages and current levels, allowing it to perform more effectively than other IGBTs.

The specific data is subject to PDF, and the above content is for reference

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