
Allicdata Part #: | APTGF180A60TG-ND |
Manufacturer Part#: |
APTGF180A60TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE NPT PHASE LEG SP4 |
More Detail: | IGBT Module NPT Half Bridge 600V 220A 833W Chassis... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 220A |
Power - Max: | 833W |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 180A |
Current - Collector Cutoff (Max): | 300µA |
Input Capacitance (Cies) @ Vce: | 8.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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.The APTGF180A60TG module belongs to transistors and more specifically to insulated-gate bipolar transistors (IGBTs). IGBTs are advanced electronic devices that are used in many electronic equipment for many different applications. This module is particularly suitable for high-power applications, where high speed switching and high efficiency need to be achieved. It is characterised by a low on-state voltage and low switching losses.
The APTGF180A60TG module is capable of controlling high currents and voltages for various applications. Typical applications include power supplies, motor drives, high-power motor and lighting control, UPS, welding and renewable energy. It is also suitable for industrial, rail and military applications as well as certain telecom applications.
The module is built with a number of discrete components. This includes an IGBT power module, an insulated gate driver, a modulation circuit, a control circuit, an anodised transistor, a snubber capacitive loop, a heat sink and a dissipation resistor. All these components work together to achieve the required goal.
The IGBT power module, in particular, is used to control the conduction of current through the conducting terminals. When a gate drive is applied to the gate, it turns on the gate power module, which then allows the current to flow. When the gate drive is removed, the gate power module turns off, preventing the current from flowing. In this way, the IGBT power module can be used to effectively control high currents and voltages.
The gate drive is responsible for providing the necessary gate bias voltage to control the conduction of the current through the conducting terminals. The gate driver essentially increases the current driving ability of the gate, allowing the power module to control higher voltages. The modulation circuit is responsible for controlling the switching speed and the degree of switching accuracy. This ensures a smooth transition from one state to another.
The control circuit is vital for ensuring the IGBT power module maintains its efficiency and accuracy. This circuitry is responsible for monitoring the various parameters such as voltage and current and also for providing feedback to the user in order to allow adjustments as needed. The anodized transistor is used to provide additional protection from overvoltage and overcurrent scenarios. The snubber capacitive loop is used to limit the peak voltages generated when switching high powers. The heat sink and the dissipation resistor are used to dissipate the generated heat.
Overall, the APTGF180A60TG module has all the components needed to control high currents and voltages for various applications. The IGBT power module allows for high-speed switching and high efficiency, while the gate drive, modulation circuit, control circuit, anodized transistor and other components work together to ensure accuracy and safety. This makes the APTGF180A60TG module an ideal choice for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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