APTGF50A120TG Allicdata Electronics
Allicdata Part #:

APTGF50A120TG-ND

Manufacturer Part#:

APTGF50A120TG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE NPT PHASE LEG SP4
More Detail: IGBT Module NPT Half Bridge 1200V 75A 312W Chassis...
DataSheet: APTGF50A120TG datasheetAPTGF50A120TG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Discontinued at Digi-Key
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 312W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.45nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Description

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APTGF50A120TG Application Field and Working Principle

Introduction

The APTGF50A120TG is a power transistor module built for general purpose applications. It is an insulated gate bipolar transistor module that is popular for its advanced features and functionality. The APTGF50A120TG is among the most efficient and reliable power transistors modules and is widely used in many types of power applications.

The APTGF50A120TG is a voltage-controlled, current controlled module. It works on a high-speed, insulated-gate field effect principle, making it suitable for a wide range of applications. This power transistor can be integrated into many different types of systems, such as switches, power amplifiers, power supplies, and motor controls.

Application Field

The APTGF50A120TG is used in a wide variety of applications. It can be used to drive a large number of high power loads, including industrial motors, AC power supplies, DC converters, and many more. In addition, this module can also perform security tasks, such as overvoltage and overtemperature protection. It is also used for high-power, low-voltage switching applications in computers, automotive, and telecommunications devices.

This power transistor module is also regularly used for input stage power amplifiers. It is capable of providing very high output power, with a low harmonic distortion, high efficiency and stability. The APTGF50A120TG can also be used in pulse-width modulation (PWM) and frequency-shift keying (FSK) applications.

Working Principle

The working of the APTGF50A120TG module is based on an insulated-gate field effect principle, where electric current is controlled by a voltage and is transferred across a insulated-gate. The electric current flows through channels in the semiconductor material and the voltage across the gate enhances the current flowing through the channels. The diverter, which is the insulated-gate, is connected to the main controlling contacts of the module, ensuring the accurate and precise control of the current.

The APTGF50A120TG module also features a built-in current responding circuit, which makes it suitable for a large number of applications. This circuit responds to changes in current and provides the necessary feedback for the transistor to operate within its predetermined range. The current responding circuit also helps the module achieve high-speed switching and fast response times.

The APTGF50A120TG is an efficient and reliable power transistor module that is suitable for many different areas of application. Its highly developed features make it suitable for many high-power applications, providing the user with reliable and accurate power control. It is a popular choice for many applications and its popularity is sure to remain for many years to come.

The specific data is subject to PDF, and the above content is for reference

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