APTGT50A1202G

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The APTGT50A1202G is an insulated gate bipolar transistor (IGBT) module. It is part of the aluminum-water cooled NGT family which is specifically designed for medium to high-power switch mode applications.

The components of the NGT family include an isolated base, a high-efficiency heat sink, and an integral water-cooling system. The main features of the NGT family are their high power capability and high temperature endurance. These features make them suitable for uses in applications such as electric motor control, renewable energy generation and storage, appliance motor drives, and power factor correction.

The APTGT50A1202G IGBT module consists of two IGBTs and one free wheel diode mounted on an aluminum base plate. The IGBTs are controlled and isolated by a reverse conduction MOSFET integrated into the module. The power terminals and control terminal are on the side of the base plate. The IGBTs are directly water cooled via the integral water-cooling system.

The APTGT50A1202G IGBT module is designed to provide high-efficiency and high-power switching capability in applications such as motor control, AC/DC power conversion, renewable energy, electric drive motor control and industrial motor control. The IGBT module can also be used for electric power factor correction, voltage regulation and inverter control. The module can withstand high temperatures up to 150°C. It is designed for operation in an environment of harsh electromagnetic interference and can meet the requirements for up to Level 4 EMC.

The working principle behind the APTGT50A1202G IGBT module is based on the basic IGBT structure. An IGBT combines the features of both a MOSFET and a bipolar transistor. When the gate voltage is low, the MOSFET is off and the IGBT acts as a bipolar transistor. When the gate voltage is high, the MOSFET is on and the IGBT acts as a MOSFET. At this point, the current flowing through the IGBT can be modulated by changing the gate voltage.

The APTGT50A1202G IGBT module utilizes a reverse conduction MOSFET to isolate the IGBTs and reduce the amount of EMI generated by the switch. The reverse conduction MOSFET is integrated into the module and requires only a simple connection to the control terminal to switch the IGBTs. This integrated reverse conduction MOSFET enables the IGBT module to meet the stringent requirements for industrial motor control applications.

The APTGT50A1202G IGBT module is ideal for high-power and high-efficiency switch mode applications such as electric motor control, AC/DC power conversion, renewable energy, electric drive motor control and industrial motor control. The IGBT module is designed to provide reliable performance in harsh EMI environments and can meet the requirements for up to Level 4 EMC.

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