APTGT75TDU120PG Allicdata Electronics
Allicdata Part #:

APTGT75TDU120PG-ND

Manufacturer Part#:

APTGT75TDU120PG

Price: $ 81.49
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MOD TRPL DUAL SOURCE SP6-P
More Detail: IGBT Module Trench Field Stop Triple, Dual - Commo...
DataSheet: APTGT75TDU120PG datasheetAPTGT75TDU120PG Datasheet/PDF
Quantity: 1000
100 +: $ 74.07260
Stock 1000Can Ship Immediately
$ 81.49
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 100A
Power - Max: 350W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
Description

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Transistors - IGBTs - Modules

The APTGT75TDU120PG is a module that makes use of the Insulated Gate Bipolar Transistor (IGBT) technology. It consists of power semiconductors that are insulated from the heat sink by a layer of insulating material. This construction and insulation helps protect the IGBTs and other power semiconductors from the damaging effects of high temperatures.

This module is used in various applications such as power conversion, motor control, switching power supplies, and more. It is suitable for high-power applications that require power levels ranging from hundreds of watts to several kilowatts. It can also be used in high-voltage and high-current applications, as the power levels are much higher than those of other semiconductor devices.

The APTGT75TDU120PG module uses proprietary IGBTs and other power semiconductors in its construction. These power devices are designed for robust performance and are designed to handle high switching frequencies, high-current loads, and extreme temperatures.

The APTGT75TDU120PG module has a low gate threshold voltage, which makes it ideal for use in high-speed switching applications. The module also has a fast switching time that helps improve the efficiency of the power conversion process. It is also capable of handling high currents and its thermal design ensures that it will perform reliably without overheating.

The APTGT75TDU120PG module operates on the principle of an Insulated Gate Bipolar Transistor, which is an electronic device that is composed of several bipolar transistors that have their gates isolated from the rest of the structure. The gate is the control terminal that is used to control the conductivity of the device, and the transistor\'s baseemitter junction is used to switch the device between two states.

The APTGT75TDU120PG module is capable of operating in the most extreme conditions with its high current ratings, high-speed switching capabilities, and efficient thermal performance. It is perfect for applications where high power levels and long lifetimes are desired. It also offers low loss and high reliability.

The advantages of using the APTGT75TDU120PG module in different applications can be summarized as follows:

  • High power levels ranging from hundreds of watts to several kilowatts
  • High-speed switching capabilities
  • Efficient thermal performance
  • Low gate threshold voltage
  • High reliability and long lifetime

In conclusion, the APTGT75TDU120PG module is an ideal choice for applications requiring high power levels and long lifetimes. Its high current and voltage ratings, fast switching capabilities, and efficient thermal performance make it well-suited for power conversion, motor control, switching power supplies, and other applications.

The specific data is subject to PDF, and the above content is for reference

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