APTGL90DA120T1G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	110A
Power - Max:	385W
Vce(on) (Max) @ Vge, Ic:	2.25V @ 15V, 75A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	4.4nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP1
Supplier Device Package:	SP1

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Transistors - IGBTs - Modules APTGL90DA120T1G is a type of Insulated Gate Bipolar Transistor (IGBT) Module, featuring a Vceo rating of 1200V and Tj rated at 150°C. This technology combines the high input impedance of a BJT (bipolar junction transistor) with the low on-state voltage of a MOSFET (metal-oxide semiconductor field-effect transistor). The result is a power module with low thermal resistance, low power consumption, and minimal losses.The primary application of an APTGL90DA120T1G is for power switching applications, such as for motor drives, HVDC (high voltage direct current) converters, UPS (uninterruptible power supplies), and renewable energy installations. It is well-suited for applications that require high power throughput and high efficiency, given its low on-state voltage and low conduction losses. Additionally, its large SOA (safe operating area) allows it to withstand large voltage and current spikes, which is generally caused by malfunctioning circuits or other external disturbances.The working principle of the APTGL90DA120T1G is rather simple and straightforward. When a voltage is applied to its gate, electrons accumulate in the semiconductor material, forming a conducting channel. This allows current to flow from the terminal to the source and from there to the load. As the voltage at the gate increases, the current flow increases. When the voltage at the gate decreases, the current flow slows. The strength of the module depends on the design of the semiconductor material, the size of its gate resistor, the capacitance of its gate, the size of its collector-emitter voltage breakdown voltage, and the number of layers in its substrate.When designing with an APTGL90DA120T1G, care must be taken to choose a gate resistor that offers sufficient current capacity while still having a low resistance. Additionally, layout considerations must also be taken into account to ensure proper cooling of the module. As a general rule, the module should be placed away from other components and have adequate space for the surrounding air to circulate.In conclusion, the APTGL90DA120T1G is a robust IGBT module with a wide range of applications. It combines the low on-state voltage of a MOSFET with the high input impedance of a BJT, resulting in a power module with low thermal resistance, low power consumption, and minimal losses. It is well suited for applications requiring high power throughput and high efficiency. Care must be taken to choose a gate resistor with a low resistance in order to ensure proper operation of the module, and layout considerations must be taken into account for optimal cooling.

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