Allicdata Part #: | APTGT25A120T1G-ND |
Manufacturer Part#: |
APTGT25A120T1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT MODULE TRENCH PHASE LEG SP1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 40... |
DataSheet: | APTGT25A120T1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 40A |
Power - Max: | 156W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 25A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 1.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
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An APTGT25A120T1G is a type of insulated gate bipolar transistor (IGBT) module, designed as an optimal tradeoff of fast switching, ruggedness, low switching losses, and suitable for any industrial application. In this article, we will explore the application fields and working principles of the APTGT25A120T1G IGBT module.
An IGBT is a type of transistor that is combination of a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor). This enables it to combine the features of both transistors into one package. The gate voltage controls the conductivity between the gate and the source, allowing either a "low" or "high" volume of current to flow through, depending on the voltage of the gate. This makes it incredibly useful for controlling power switches and other power-management applications.
The APTGT25A120T1G IGBT module has a maximum voltage rating of 1200 volts and a maximum-continuous current rating of 25 amps. This makes it highly suitable for any industrial application which requires fast switching, durable performance and low switching losses. In addition to this, the module also has an integrated over temperature protection and short-circuit detection feature. This makes it perfectly suited for applications such as motor control and power switching in industrial machinery.
The working principle of the APTGT25A120T1G IGBT Module is based on the principles of semiconductor technology. When the voltage is applied to the gate, electrons are excited and a semi-conducting material is created. The semi-conducting material conducts current, allowing current to flow from the source to the drain of the IGBT. When the voltage on the gate increases or decreases, the conductivity of the semi-conducting material also changes, allowing current to be switched on and off quickly.
The APTGT25A120T1G IGBT module can be used for a variety of applications, including high-current switching, motor control, and power distribution. It is ideal for industrial applications that require low power consumption and reliable performance. Additionally, its high switching frequency and low switching losses make it ideal for applications that require fast switching speeds. Its integrated over-temperature protection and short-circuit detection also ensure that it can safely and reliably operate in any application.
In summary, the APTGT25A120T1G IGBT Module is an ideal choice for applications that require fast and reliable switching, low switching losses and robust operation. Its ability to handle high currents and high voltages makes it perfect for industrial applications. Its integrated over-temperature protection and short-circuit detection ensure that it can be safely operated in all situations. Finally, its wide range of applications makes it suitable for a variety of power-management and motor-control applications.
The specific data is subject to PDF, and the above content is for reference
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