APTGF200U120DG

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APTGF200U120DG is a device based on Interegated Gate Bipolar Transistors (IGBTs) module. It is specially designed to control higher voltage and current levels in medium- and high-power applications. This module features both intrinsic characteristics of insulated gate devices as well as low-on-state losses. Its high operating voltage makes it well suited for use in renewable energy applications such as wind turbine, solar power, inverters, and uninterruptible power supplies, as well as variable frequency drives and switching regulators.

The module consists of three IGBT power chips in parallel connection and the respective diode chips in antiparallel connection. It provides a current rate of 200A and a peak current rate of 252A with a 1200V rated voltage. The IGBTs incorporated in the module have a low collector-to-emitter turn-off voltage (Vacce), which reduces dissipation and ensures higher performance with relatively lower losses. To ensure that the device remains healthy, it features temperature sensing being low thermal impedance with secure temperature sensing on the chips.

In comparison to other power semiconductor switching devices such as MOSFETs, IGBTs feature higher static, dynamic and parasitics characteristics and are suitable for high-power switching applications. This makes them a viable solution for supplying power and controlling current and voltage levels in applications such as renewable energy and motor control applications. The modular design allows for easy assembly, simplifies wiring and reduces the need for bulky heatsinks.

The working principle of the APTGF200U120DG module is relatively simple. It consists of a gate control circuit (GCC) and three parallel IGBT switches operating in anti-parallel with the respective diodes. When the gate control circuit is turned on, the gate voltage of the IGBT switches is increased, which allows current to flow between the emitter and collector electrodes of the IGBT switches. The diode provides an opposite path of current flow which keeps the average current constant. At the same time, the module also reduces the power dissipation on the IGBT switches due to the antiparallel connection.

When the gate control circuit is turned off, the gate voltage falls and the current flow between the emitter and collector electrodes is reduced. This further reduces the power dissipation as the IGBT switches switch to their "off" state quickly. The diode continues to provide path for the current to flow and thus, the current is kept constant.

The APTGF200U120DG module can be used in a wide range of applications, from renewable energy to motor control. Its anti-parallel connection of the IGBT switches and diodes allows for better control, higher efficiency and fewer losses. Additionally, its high operating voltage makes it a viable option for high-power applications. It is, therefore, an ideal choice for high-power applications that require precise voltage and current control.

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