Series:	--
Part Status:	Obsolete
IGBT Type:	NPT
Configuration:	Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	42A
Power - Max:	140W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 30A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	1.35nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	SP1
Supplier Device Package:	SP1

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Introduction

APTGF30H60T1G is an insulated-gate bipolar transistor (IGBT) module designed exclusively for high power applications. It is suitable for medium voltage applications such as motor drive and industrial current control. APTGF30H60T1G utilizes advanced chip technologies, excellent manufacturing process and high quality packaging material to offer superior features such as high wattage, low switching noise and high voltage withstand capability. It also provides superior reliability, longer device life and lower power consumption.

Application Field

APTGF30H60T1G IGBT module is widely used in the medium voltage applications such as motor drives, industrial current control and various other medium power applications. It is ideal for controlling the speed of motors, especially for the applications that require smooth and precise speed control. APTGF30H60T1G IGBT module is also suitable for applications such as UPS and solar inverters which require less switching noise.

Working Principle

An IGBT is a type of power semiconductor device consisting of a low-impedance bipolar transistor and an insulated gate FET. This combination of devices enables higher switching speed than a standard BJT, while providing better voltage and thermal performance.The APTGF30H60T1G IGBT module works on the principle of combining the low-impedance characteristics of a bipolar transistor with the high-efficiency characteristics of a FET. The FET gate acts as a switch which is used to control the current flow through the conductive region of the module. The modulated current flow is then used to control the power output of the module.When the IGBT module is turned on, the voltage given to the gate is reduced, and the module operates normally. In contrast, when the voltage given to the gate is increased, the current limitation of the transistor decreases, allowing a larger current to flow and a higher power output to be obtained.

Conclusion

APTGF30H60T1G IGBT module is an ideal solution for medium voltage applications that require high wattage, low switching noise, and superior reliability. It is suitable for applications such as motor drives, industrial current control and various other medium power applications. Its working principle is based on the combination of the low-impedance characteristics of a bipolar transistor and the high-efficiency characteristics of a FET.

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