APTGF50TDU120PG Allicdata Electronics
Allicdata Part #:

APTGF50TDU120PG-ND

Manufacturer Part#:

APTGF50TDU120PG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: IGBT MODULE NPT TRPL DUAL SP6-P
More Detail: IGBT Module NPT Triple, Dual - Common Source 1200V...
DataSheet: APTGF50TDU120PG datasheetAPTGF50TDU120PG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 312W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.45nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
Description

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The APTGF50TDU120PG is a powerful transistor module that is widely used across industries, such as automotive, consumer electronics, aerospace and telecommunication. This module can provide superior switching performance while consuming low power, thus it is highly recognized by engineers who require a reliable switch solution.

The APTGF50TDU120PG is composed of an insulated gate bipolar transistor (IGBT) and a freewheeling diode. It has the capability to switch heavy loads within milliseconds, making it an ideal switch for motors, relays and other power amplifying applications. The IGBT is closely related to classical BJT, but unliks BJT, it has a wide range of gate voltage control and relatively low on-state voltage drop.

It is important to note that proper selection of IGTP is critical to the efficiency and heat dissipation in power conversion systems. The APTGF50TDU120PG is a medium power device with a current rating at 50A and voltage rating at 600V. Additionally, it has a trapezoidal termination and a low total parasitic inductance of 1.9nH. It also features a very low on-state voltage drop (Vce(sat)), an operating temperature range from -40 °C to +125 °C, and standard fast IGBTs with anti-parallel diode.

When discussing IGBT’s working principle, it is important to remember that it functions like a transistor switch. Its gate terminal controls the current flow between its two conduction terminals, allowing electricity to pass through when a forward voltage has been applied. Once the current is passed, the IGBT will reach saturation, indicated by a low on-state voltage drop.

The APTGF50TDU120PG is also capable of providing a much higher current density than regular MOSFETs. This is possible due to its unique structure, combining both an N-channel MOSFET and a series-connected PNP (BJT) transistor. This makes the APTGF50TDU120PG the perfect choice for current applications requiring high speed and high current capacity.

Due to its unique characteristics, the APTGF50TDU120PG is very popular across industries and is widely used in applications such as motor control, power conversion, switching and DC-DC converters as well as AC-DC Power Supplies. This module is also ideally suited for motor drive systems, as it is able to withstand high temperatures and can safely support high speed switching without compromising its reliability.

The APTGF50TDU120PG is ideal for a range of power conversion applications, due to its low power consumption, high switching speed, robust structure and its low on-state voltage drop. It is a great choice for engineers looking for a reliable, efficient, and powerful transistor module.

The specific data is subject to PDF, and the above content is for reference

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