
Allicdata Part #: | APTGF530U120D4G-ND |
Manufacturer Part#: |
APTGF530U120D4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 1200V 700A 3900W D4 |
More Detail: | IGBT Module NPT Single 1200V 700A 3900W Chassis Mo... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 700A |
Power - Max: | 3900W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 600A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 37nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D4 |
Supplier Device Package: | D4 |
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APTGF530U120D4G Application Field and Working Principle
The APTGF530U120D4G is an insulated gate bipolar transistor (IGBT) module. Basically, an IGBT is a power semiconductor device, which incorporates both MOSFET and bipolar junction transistor (BJT) technology in the same package.
Because of its design, an IGBTr is capable of blocking and controlling very high voltages while still offering the fast switching speed of a MOSFET and lower drive current requirements of a BJT. This makes them suitable for a variety of applications, such as switch mode power supplies, motor drives, RF power amplifiers, power distribution and even high voltage solar inverters.
Basic Operation of APTGF530U120D4G
The APTGF530U120D4G is a 1200 volt IGBT module, which contains two cells each connected in antiparallel to form a single package. The module has a built-in antiparallel diode which is optimized for fast reverse-recovery.
The APTGF530U120D4G consists of two IGBTs and one diode connected in series in a common emitter configuration. When a positive gate current is applied, it turns on the top IGBT and the diode becomes conductive, allowing current to flow from the anode of the top IGBT to the cathode of the bottom IGBT. When a negative gate current is applied, it turns off the top IGBT and the diode becomes reverse biased, thus blocking current flow between the two IGBTs.
Applications of APTGF530U120D4G
The APTGF530U120D4G is suitable for a variety of applications, including switch mode power supplies, motor drives, RF power amplifiers, power distribution, and high voltage solar inverters.
The APTGF530U120D4G is well suited for use in high frequency switch mode power supplies due to its low switching losses, high frequency operation and high current carrying capability. It can also be used in motor drives, such as servo motors, for its excellent controllability. The device can also be used for RF power amplifiers, which require high current handling capability and superior switching performance.
The device can also be used in solar inverters due to its excellent temperature characteristics, which enable its use in high temperature applications. It is also capable of blocking and controlling very high voltages, which makes it suitable for use in power distribution systems.
Conclusion
The APTGF530U120D4G is an IGBT module, which is well suited for a variety of applications, including switch mode power supplies, motor drives, RF power amplifiers, power distribution and high voltage solar inverters. Its high blocking voltage and fast switching speed make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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