
Allicdata Part #: | APTGF660U60D4G-ND |
Manufacturer Part#: |
APTGF660U60D4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | IGBT 600V 860A 2800W D4 |
More Detail: | IGBT Module NPT Single 600V 860A 2800W Chassis Mou... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | NPT |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 860A |
Power - Max: | 2800W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 800A |
Current - Collector Cutoff (Max): | 500µA |
Input Capacitance (Cies) @ Vce: | 36nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D4 |
Supplier Device Package: | D4 |
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An APTGF660U60D4G transistor module is an insulated-gate bipolar transistor (IGBT) module. It is commonly used in the high- and medium-voltage electronic devices, such as inverters and motor drives. This module is composed of a multiple structure composed of IGBTs, fast recovery freewheeling diodes, harmonic suppression capacitors, and other passive components.
The APTGF660U60D4G IGBT module is designed for medium- and high-voltage applications up to 600V DC. It has an Integrated Gate Commutated Thyristor (IGCT) mode capability, which allows it to switch high currents at a higher rate than conventional IGBTs. It also has a voltage rating of up to 660V, which makes it suitable for use in medium- and high-voltage applications.
The APTGF660U60D4G module features three-phase control, which enables it to have precise switching control. It is also designed for low loss and high efficiency for high-speed switching operations. Its high-speed switching capability also makes it suitable for use in motor drives and inverters to ensure fast and precise switching.
The working principle of the APTGF660U60D4G IGBT module is based on the principles of an insulated-gate bipolar transistor (IGBT). In an IGBT, the gate voltage controls the flow of current in the channel of the device. When the gate voltage is applied, it allows current to flow through the device, allowing it to be switched on. When the gate voltage is removed, the current flow is blocked, allowing the device to be switched off.
The APTGF660U60D4G module is designed to provide a highly optimized cost-effectiveness ratio for medium- and high-voltage applications. It has a low conduction loss, high output power capability, and a wide temperature range making it suitable for high-voltage applications in various industries. The module also has excellent dynamic and static properties, which allow it to be used in motor drive and control applications.
The APTGF660U60D4G transistor module is widely used in various medium- and high-voltage applications, such as motor drives and inverters. It is also used in renewable energy applications, such as solar and wind power systems. It can also be used in industrial automation, military, and aerospace applications. The module is also used in power electronics applications, such as charging systems, traction systems, and battery charging systems.
The APTGF660U60D4G transistor module is highly reliable and offers extremely high switching speeds. Its high switching capacity makes it suitable for high voltage applications, such as motor drives and inverters. Its three-phase control capability allows for precise switching control, making it suitable for use in medium- and high-voltage applications.
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