APTGF75DH120TG

Series:	--
Part Status:	Obsolete
IGBT Type:	NPT
Configuration:	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	100A
Power - Max:	500W
Vce(on) (Max) @ Vge, Ic:	3.7V @ 15V, 75A
Current - Collector Cutoff (Max):	250µA
Input Capacitance (Cies) @ Vce:	5.1nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	SP4
Supplier Device Package:	SP4

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APTGF75DH120TG application field and working principleThe APTGF75DH120TG is a type of insulated-gate bipolar transistor (IGBT) module, which is an electronic component with a wide range of applications. It is an advanced type of power semiconductor component that is used in applications such as motor drives, motor control systems, motor controllers, and for power switching applications.An IGBT module is a unique type of power component which combines the characteristics of a bipolar transistor and a metal-oxide-semiconductor field-effect transistor (MOSFET) into a single component. IGBTs are a type of electronic component which provides a more efficient alternative to using conventional power components such as bipolar transistors. IGBT modules have a low on-state voltage, which is generally around 2V, and a higher breakdown voltage of approximately 375V. They also offer excellent switching speed, which means they are ideal for applications that require fast switching power events.APTGF75DH120TG is an ideal choice for applications in motor drives, motor control systems, and other high power switching applications. This IGBT module enables high-power operation, a fast switching speed, and low on-state voltage, which makes it an ideal choice for applications requiring high power power switching operations. It also offers excellent thermal capabilities, with a maximum operating temperature of 175 degrees Celsius. This module is also highly reliable, allowing for extended periods of operation without fail, which is important for motor control systems.The APTGF75DH120TG module also benefits from wide operationg temperature ranges and high-flexibility with switching frequency. It is also very cost-effective, as it offers mass production of IGBTs at a low cost. In addition, this module also offers higher efficiency and lower power consumption than other types of power components, which makes it suitable for applications with tight power budgets.The working principle of the APTGF75DH120TG module is simple and combines the characteristics of a bipolar transistor and MOSFET. In this design, an internal MOSFET is used to control the on/off current flow through an external IGBT. When a gate voltage is applied to the IGBT gate, it generates a field, which causes a current to flow through the IGBT and the internal MOSFET. This current then activates the external IGBT, and switches it to the on or off state.In order to control the device, a low voltage control signal needs to be applied to the device’s gate. This power signal can be generated in a digital or analog form. The advantage of using a digital signal is that it requires less circuitry and makes the device easier to control. In addition, digital signals are more reliable than analog signals, and are also more efficient in terms of power consumption.The APTGF75DH120TG IGBT module is an ideal choice for applications in motor drives and motor control systems. This device is cost-effective and offers fast switching speeds, low on-state voltage, and excellent thermal characteristics. In addition, it offers high efficiency and reliability, and requires a low voltage control signal for activation. All these factors make the APTGF75DH120TG IGBT module an ideal choice for applications in high-power switching applications.

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