APTGL60DDA120T3G

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Insulated Gate Bipolar Transistors (IGBTS) are one of the most popular forms of power switching transistors available today. By combining the high current, voltage and power of a BJT with the low capacitance and fast switching speed of a MOSFET, IGBT can deliver superior performance in a wide range of power delivery applications. The APTGL60DDA120T3G is an IGBT module that provides superior power handling in a continuous current mode of up to 60A for 120V of collector voltage.

The APTGL60DDA120T3G is typically utilized in applications where low switching losses, high voltage and power, and fast switching times are required. Common applications include motor control, DC/AC conversion, UPS systems, automotive applications and renewable energy. The module has a variety of useful features including thermal and reverse conducting protection, fast turn off, low junction temperature and a wide range of maximum collector and emitter voltages.

The APTGL60DDA120T3G is constructed from three IGBT power switches, each rated for up to 60A in current and 120V in voltage. The IGBTs are assembled in a three-phase module configuration with a positive terminal, a common terminal and a negative terminal. The module also has an integrated gate driver which is used to control the switching of the IGBTs. The gate driver is capable of delivering up to 600V of switching voltage on a single TTL input.

The APTGL60DDA120T3G utilizes an insulated gate bipolar transistor (IGBT) as the main power semiconductor device. IGBTs are a type of power switching transistor that combines the properties of a BJT and a MOSFET, offering superior performance with low power loss and low switching speeds. The IGBT structure consists of an insulated gate, a drift region and a collector region, which are connected to form a unique three-terminal device. The gate terminal is used to control the switching of the IGBTs and can be either a positive or negative driving voltage.

The gate of the IGBT is voltage-controlled and when a positive voltage is applied to the gate, electrons are attracted to the gate-drift region interface, resulting in positive charge accumulation. This charges in turn modulates the electric field in the drift region increasing the forward voltage of the device, thus turning it on. Conversely, a negative voltage applied to the gate will resist the flow of electrons, resulting in the IGBT turning off. This makes IGBTs extremely useful in power switching applications where very fast switching speeds are required.

The APTGL60DDA120T3G also has a built-in thermal protection feature which ensures that the module is not overstressed when used in extreme temperature ranges. The module also has reverse conducting protection, which prevents current flow in the opposite direction by automatically turning the IGBTs off. Both the thermal and reverse conducting protection features can be monitored using the integrated monitoring pins.

Overall, the APTGL60DDA120T3G is an ideal choice for applications where compact size, low power loss, fast switching speed, and high current rating are needed. Its integrated gate driver and thermal and reverse conducting protection features make it perfect for a wide range of power delivery applications in motor control, DC/AC conversion, automotive, and renewable energy. With its robust design, the APTGL60DDA120T3G can easily handle up to 60A of continuous current in a variety of demanding operating conditions.

The specific data is subject to PDF, and the above content is for reference