| Allicdata Part #: | APTGLQ25H120T1G-ND |
| Manufacturer Part#: |
APTGLQ25H120T1G |
| Price: | $ 26.63 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | POWER MODULE - IGBT |
| More Detail: | IGBT Module Trench Field Stop Full Bridge 1200V 50... |
| DataSheet: | APTGLQ25H120T1G Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 24.21310 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Full Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 50A |
| Power - Max: | 165W |
| Vce(on) (Max) @ Vge, Ic: | 2.42V @ 15V, 25A |
| Current - Collector Cutoff (Max): | 50µA |
| Input Capacitance (Cies) @ Vce: | 1.43nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 175°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | SP1 |
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Transistors - IGBTs - Modules
The APTGLQ25H120T1G, from American Semiconductor, is an insulated gate bipolar transistor, or IGBT that is built with a simple design and optimized for straightforward application to electricity and electronics. This IGBT is part of a module, which is the easiest form of IGBT and the one most applicable in wide variety of uses. This module has a gate charge of 180nC, a system operating temperature range of -40°C to 125°C and a collector emitter voltage of 1200V. In this article, we\'ll discuss the application field and working principle of the APTGLQ25H120T1G module.
Application Field
The APTGLQ25H120T1G module is primarily used in power electronics applications. This includes applications like power supplies, motor control, uninterruptible power supplies and solar inverters. This IGBT module is also used in the manufacture of home appliances such as air conditioners, refrigerators and other household appliances. The APTGLQ25H120T1G is also used in automotive applications, such as hybrid and electric vehicle power systems.
Working Principle
The APTGLQ25H120T1G module is an IGBT module, which stands for insulated gate bipolar transistor. IGBTs combine the features of MOSFETs (metal oxide semiconductor field effect transistors) and BJTs (bipolar junction transistors). When voltage is applied to the module, it draws in a current from the drain. This current is then passed through the gate, which controls the amount of current that can be switched through the module. The gate voltage determines the current flow from the gate to the drain. This current is responsible for controlling the on/off states of the device.
Since IGBTs are bi-directional, they can be used both as a switch to turn the current on and off, or as an amplifier to amplify the current. When used as a switch, the IGBT turns the current on and off depending on the applied gate voltage. When used as an amplifier, the IGBT increases the current passing through it based on the applied gate voltage. This allows the device to have different levels of current flow at different gate voltages.
Conclusion
The APTGLQ25H120T1G module is an IGBT that has been designed for use in a wide variety of power electronics applications. This IGBT is part of a module, which is the most widely used form of IGBT. This IGBT module has a gate charge of 180nC, a system operating temperature range of -40°C to 125°C and a collector emitter voltage of 1200V. It is used primarily in power electronics applications, such as power supplies, motor control, uninterruptible power supplies and solar inverters, as well as in the manufacture of home appliances and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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APTGLQ25H120T1G Datasheet/PDF