Allicdata Part #: | APTGLQ300SK120G-ND |
Manufacturer Part#: |
APTGLQ300SK120G |
Price: | $ 65.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MODULE - IGBT |
More Detail: | IGBT Module Trench Field Stop Buck Chopper 1200V 5... |
DataSheet: | APTGLQ300SK120G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 59.26820 |
Specifications
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Buck Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 500A |
Power - Max: | 1500W |
Vce(on) (Max) @ Vge, Ic: | 2.42V @ 15V, 300A |
Current - Collector Cutoff (Max): | 200µA |
Input Capacitance (Cies) @ Vce: | 17.6nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | SP6 |
Description
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APTGLQ300SK120G Application Field and Working Principle
Transistors - IGBTs - Modules
The APTGLQ300SK120G device is an insulated gate bipolar transistor (IGBT) module produced by Avago Technologies. It is part of the Hyperfast IGBT product family, which is suitable for a wide range of applications such as motor drives, power supplies, inverters, and UPS systems. As with most IGBTs, it is designed to provide higher power densities, better performance, and lower cost, compared to standard bipolar transistors. This article will discuss the application field and working principle of the APTGLQ300SK120G.First, we will discuss the application field of the APTGLQ300SK120G. The APTGLQ300SK120G is designed for high-voltage, low-emission operations such as motor drive, UPS system, power supply, and inverter applications. It is suitable for medium-voltage applications, such as electric vehicle drives, and for high-current switch-mode power supplies. In addition, it can be used in electric fans, pumps, welding machines, and other low-voltage AC motor applications due to its low gate drive current.The APTGLQ300SK120G is capable of conducting up to 300 amperes of DC current while having a peak voltage of up to 600 volts. It has a low on-state voltage drop of 3.75 volts, which helps in reducing energy losses. Moreover, it has a high surge current rating of 100 amperes. Furthermore, it has excellent thermal characteristics with a junction-to-case thermal resistance of 1.4°C/W and a low maximum thermal operating temperature of 150°C. In terms of its structural design, the APTGLQ300SK120G comes in an inverter-grade package with an integrated self-leakage free anti-parallel diode. The anti-parallel diode drastically reduces the gate drive losses, which helps in providing a high level of efficiency. The device also comes with short-circuit protection and other features such as soft-gating, over-temperature protection, and over-current protection to ensure better system performance and reliability. Moving on to its working principle, the APTGLQ300SK120G works on the principle of an insulated gate bipolar transistor (IGBT), which consists of an N-type collector, an insulated gate, and a P-type layer. When using the APTGLQ300SK120G, the gate voltage is applied to the insulated gate via the drive circuit. This causes electrons to be released onto the semiconductor base and recombined with holes in the P-type layer. This then creates a conductive channel across the collector, emitter, and base.When a voltage is applied to the emitter and collector, the device will begin conducting current. The junction potential between the P and N layers of the device controls the current conduction between the emitter and collector. This allows current to be switched on and off quickly, which increases the switching speed of the device. Furthermore, IGBTs are capable of handling high current values and delivering high power at a low voltage level.Overall, the APTGLQ300SK120G is a reliable, cost-effective, and high-performance IGBT module, which can be easily integrated into most medium and high voltage applications. Its low gate drive current, anti-parallel diode, and other features make it the perfect choice for many different power-switching applications.
The specific data is subject to PDF, and the above content is for reference
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