APTGLQ40H120T1G Allicdata Electronics
Allicdata Part #:

APTGLQ40H120T1G-ND

Manufacturer Part#:

APTGLQ40H120T1G

Price: $ 30.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: PWR MOD IGBT4 1200V 75A SP1
More Detail: IGBT Module Trench Field Stop Full Bridge 1200V 75...
DataSheet: APTGLQ40H120T1G datasheetAPTGLQ40H120T1G Datasheet/PDF
Quantity: 1000
100 +: $ 27.39400
Stock 1000Can Ship Immediately
$ 30.14
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 75A
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 2.3nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SP1
Supplier Device Package: SP1
Description

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Transistors - IGBTs - Modules

The APTGLQ40H120T1G is a module series of insulated gate bipolar transistors (IGBTs) made with an advanced low on-resistance junction technology to provide low conduction losses and excellent switching ability across a wide range of temperatures. The modules are well suited for high frequency switching applications and offer constant speed switching benefits to power converters in applications such as motor driving, frequency service, UPS systems, solar inverters and traction systems.

IGBT Module Construction

APTGLQ40H120T1G consists of two IGBTs mounted in a power plastic package and protected by a thermal conductor casing on both sides. The module’s casing provides insulation between the gate and emitter connection reducing chances of noise distortion. It also dissipates heat generated by the IGBT circuit and minimizes potential for damage to the transistor.

Application Field

The APTGLQ40H120T1G series of IGBT modules are designed to be used in applications which require fast high frequency switching such as motor drives, robotics, AC inverters, variable frequency drives and high-power converters. The low on-resistance module design offers low conduction losses while maintaining a lower than averager temperature rise and providing excellent switching capability across a wide range of temperatures.

Working Principle

IGBTs are constructed of two junction layers; a P-N junction and an insulated-gate bipolar transistor (IGBT). When a voltage is applied to the gate of the device, a current flows between the emitter and the collector. The current produces a magnetic field which causes the junction layers to polarize and act as an electrical switch. In order for the IGBT to switch off, the current must be removed from the gate. This is done by the switching off of the transient gate current pulse. When the current is removed from the gate, the electrons in the P-N junction recombine and the device is no longer conducting, turning off the electrical device it is controlling.

APTGLQ40H120T1G modules are designed to minimize the losses associated with IGBTs during operation. The advanced low on-resistance junction technology helps to reduce conduction losses, minimizes temperature rise and maintains constant switching speeds that the IGBTs require to operate. The thermal conductor casing of the APTGLQ40H120T1G provides protection and efficient dissipation of heat to ensure proper operation and reduce the risks of damage to the module.

Conclusion

The APTGLQ40H120T1G series of IGBT modules are designed to provide low conduction losses, constant speed switching and excellent switching capability across a wide range of temperatures. The module design includes a thermal conductor casing and advanced low on-resistance junction technology which minimizes potential for damage and provides reliable and efficient operation. The modules are ideal for use in high frequency switching applications such as motor drives, robotics, AC inverters, variable frequency drives and high-power converters.

The specific data is subject to PDF, and the above content is for reference

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