APTGT150DA120G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	220A
Power - Max:	690W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 150A
Current - Collector Cutoff (Max):	350µA
Input Capacitance (Cies) @ Vce:	10.7nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	SP6
Supplier Device Package:	SP6

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Transistors - IGBTs - Modules: APTGT150DA120G Application Field and Working Principle

The APTGT150DA120G is an Insulated Gate Bipolar Transistor (IGBT) module in a dynamic dV/dt rated package that combines the high switching speed and low saturation voltage characteristics of power MOSFETs with the low safe operating region and gate to emitter/collector avalanche characteristics of bipolar transistors. These devices are specifically designed for intensive switching applications that require low loss and high-speed capabilities, such as DC Motor Drives and other power conversion applications.

What is an IGBT?

An Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device which combines two device technologies, MOSFETs and Bipolar Transistors, into one device. It combines the low-on state resistance, fast switching speed and ease of control of the MOSFET, with the high blocking voltage and low-cost advantages of the Bipolar transistor.

APTGT150DA120G Application Field

APTGT150DA120G is designed for applications that require high speed, low power dissipation, low saturation, and low switching loss. These types of applications may include DC Motor Drives, DC UPS, Solar Inverters and other Power Conversion applications. Other applications may include low voltage welding, induction heating, consumer goods, home appliances, lighting, and industrial automation.

APTGT150DA120G Working Principle

The APTGT150DA120G works by its two different architecture, MOSFET and Bipolar transistor. When the IGBT is in the OFF state, it behaves as a Bipolar transistor and therefore, it does not allow current to pass between the collector and the emitter. On the other hand, it behaves as a MOSFET when it is in the ON state and instead of turning off by reducing the gate voltage, here the gate current must be increased actually to turn off the device.The APTGT150DA120G is switched on with a positive gate signal and the collector-emitter channel is allowed current to flow, whereas the IGBT is turned off by removing the gate voltage (decreasing the gate voltage to negative) and the conduction state of the channel is broken.

Conclusion

APTGT150DA120G is a highly optimized and reliable module suited for various efficiently switching applications such as DC Motor Drives, DC UPS, Solar Inverters and other Power Conversion applications. The device works on the principles of the MOSFET and Bipolar Transistor and has the capability of providing high speed power conversion with low power dissipation and low switching losses.

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