APTGT150DU120G

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Dual, Common Source
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	220A
Power - Max:	690W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 150A
Current - Collector Cutoff (Max):	350µA
Input Capacitance (Cies) @ Vce:	10.7nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	--
Mounting Type:	Chassis Mount
Package / Case:	SP6
Supplier Device Package:	SP6

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<p>The APTGT150DU120G is one of the many IGBT modules available on the market. IGBTs, or Insulated Gate Bipolar Transistors, are power electronic devices that combine the positive characteristics of both bipolar transistors and metal-oxide-semiconductor FET transistors. IGBT modules are integrated circuits composed of multiple IGBTs or power transistors.</p><p>The APTGT150DU120G is a high-power IGBT module, with a voltage rating of 1200 volts and an output current of 150 amperes. It is designed to operate in hard-switched and resonant converters in a wide variety of applications, including motor drives, solar inverters, welding and induction heating and traction systems.</p><p>The APTGT150DU120G features an integrated fast recovery Free Wheeling Diode (FRD) on the same module with the IGBTs. This integrated FRD insulation helps reduce losses of the IGBTs and extends the lifetime of the power module. The APTGT150DU120G is designed to be suitable for use in high frequency applications up to 10 kHz.</p><p>The structure of the module is similar to most IGBT modules, with an insulated baseplate. The module also includes an electromechanical pressure contact system, allowing for reliable performance even in high operating temperatures. This is a Fanuc-style package, which allows for a high degree of heat dissipation and higher circuit efficiency compared to some other packages.</p><p>The working principle of the APTGT150DU120G module is based on the structure of an Insulated Gate Bipolar Transistor (IGBT). This type of transistor is composed of two types of transistors, an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) and a P-channel isolated electrode transistor.</p><p>This allows the APTGT150DU120G module to have both high frequency performance and high power capability, due to its increased switching speed compared to regular power transistors. In other words, the IGBT module can control the movement of electrons much faster than normal power transistors, meaning that it can operate in high frequency applications deserving of high speed switching.</p><p>The module\'s inherent high switching speed also means that it is suitable for hard-switched and resonant converters. The APTGT150DU120G module features an insulated baseplate, enabling it to handle high-voltage applications. The baseplate also offers circuit protection against excessive temperatures and/or overcurrent through the insulation material.</p><p>Overall, the APTGT150DU120G module is a suitable choice for a variety of applications that require high-current switching and/or high-frequency operation. Its integrated fast recovery Free Wheeling Diode (FRD) helps reduce losses and its high-voltage ratings help it handle high-power operations. Its fast switching speeds also make it an ideal choice for hard-switching and resonant converters.</p>

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