Allicdata Part #: | APTGT200A602G-ND |
Manufacturer Part#: |
APTGT200A602G |
Price: | $ 31.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | POWER MOD IGBT3 PHASE LEG SP2 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 600V 290... |
DataSheet: | APTGT200A602G Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 28.28430 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 290A |
Power - Max: | 625W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 200A |
Current - Collector Cutoff (Max): | 50µA |
Input Capacitance (Cies) @ Vce: | 12.3nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP2 |
Supplier Device Package: | SP2 |
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Power transistors are widely used in both industrial and consumer electronics. They are capable of handling large amounts of power, yet can also provide a high level of accuracy and control. They come in a variety of sizes and have many applications. One type of power transistor is the Insulated Gate Bipolar Transistor (IGBT) module, which is available in many variations. The APTGT200A602G is an IGBT module that is commonly found in power supply and motor control applications.
An IGBT module is basically an insulated-gate or power device that combines two different semiconductor components – a bipolar transistor and an insulated-gate FET (field-effect transistor). The major constituent of the APTGT200A602G is an N-channel insulation-gate FET (IGFET) with a dielectrically coated P-type silicon layer in the gate portion of the FET. This layer helps to reduce the voltage requirements of the FET while also enhancing its switching characteristics.
The primary benefit of the APTGT200A602G is its ability to efficiently switch large amounts of power. This is due largely to its high switching speed, which can reach up to 200 volts per microsecond. As a result, the module can be used in high-power applications, such as switching power supplies and motor control configurations. Additionally, the APTGT200A602G is capable of providing high levels of accuracy and control over the switching process, ensuring that the desired power levels can be maintained with a high degree of reliability.
The APTGT200A602G can also provide excellent safety features. This is due largely to the fact that it has built-in protection against thermal runaway and is capable of operating over a wide range of temperatures without compromising its performance. Additionally, the IGBT module includes a protective coating that helps to shield against damage from corrosive substances or dust that may be present in the environment.
As far as its working principle is concerned, the APTGT200A602G uses two different types of technology to control and switch electrical power. The first type is a junction field-effect transistor (JFET), which is used for voltage regulation and helps to limit the current that is delivered to a load. The second type is a bipolar transistor, which is used for switching and helps to control the amount of power that is delivered to a load.
The APTGT200A602G is a powerful and reliable IGBT module that finds its applications in a variety of industrial and consumer products. Its high switching speed, precision control, and built-in protection make it an ideal choice for power supply and motor control applications. Additionally, its wide temperature range and protective coating make it suitable for demanding industrial applications. As such, the APTGT200A602G is a highly versatile and capable IGBT module that can be used in many different types of projects.
The specific data is subject to PDF, and the above content is for reference
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